00448nas a2200133 4500008004100000020002200041245003000063210003000093250001900123260001900142300000800161100002300169856012200192 2010 eng d a978-0-12-374774-700aSolar Cell Device Physics0 aSolar Cell Device Physics aSecond Edition bAcademic Press a4001 aFonash, Stephen, J uhttp://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-100929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
10aConversion efficiency10aEnergy conversion10asolar cells10aSolar energy10aSolar power generation1 aGreen, Martin, A1 aEmery, Keith1 aHishikawa, Yoshihiro1 aWarta, Wilhelm uhttp://dx.doi.org/10.1002/pip.97401286nas a2200169 4500008004100000022001400041245010500055210006900160300001600229490000700245520069800252653002700950653002300977653002401000100002101024856007101045 2008 eng d a0927-024800aSelf-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients0 aSelfconsistent optical parameters of intrinsic silicon at 300 K a1305–13100 v923 aAn updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.10aAbsorption coefficient10aoptical properties10aSILICON SOLAR CELLS1 aGreen, Martin, A uhttp://www.sciencedirect.com/science/article/pii/S092702480800215800442nas a2200121 4500008004100000245012200041210006900163300001200232490000700244100001300251700000700264856004900271 2007 eng d00aSeries resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste0 aSeries resistance characterization of industrial silicon solar c a493-5050 v151 aMette, A1 aal uhttps://www.pveducation.org/zh-hans/node/35300428nam a2200121 4500008004100000020001800041245005500059210005500114250001600169260005100185100002100236856004900257 2006 eng d a978047173906700aSemiconductor material and device characterization0 aSemiconductor material and device characterization a3rd edition aPiscataway NJ; Hoboken N.J.bIEEE Press; Wiley1 aSchroder, Dieter uhttps://www.pveducation.org/zh-hans/node/37600360nas a2200109 4500008004100000245006200041210006200103260000900165100001200174700001500186856004900201 2003 eng d00aSolar Position Algorithm for Solar Radiation Applications0 aSolar Position Algorithm for Solar Radiation Applications c20031 aReda, I1 aAndreas, A uhttps://www.pveducation.org/zh-hans/node/37000450nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004900267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/zh-hans/node/29500538nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004900331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/zh-hans/node/29600453nas a2200133 4500008004100000020001800041245002200059210002200081250001900103260004300122300000800165100002000173856012600193 2000 eng d a0-471-98853-700aSolar Electricity0 aSolar Electricity aSecond Edition aChichester, EnglandbJohn Wiley & Sons a2711 aMarkvart, Tomas uhttp://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-100298nam a2200097 4500008004100000245003500041210003500076260001800111100002200129856004900151 2000 eng d00aSolid State Electronic Devices0 aSolid State Electronic Devices bPrentice Hall1 aStreetman, Ben, G uhttps://www.pveducation.org/zh-hans/node/39200437nas a2200145 4500008004100000245005600041210005400097260002200151300001200173100001400185700001600199700001200215700001500227856004900242 1997 eng d00aA simple processing sequence for selective emitters0 asimple processing sequence for selective emitters aNew York, NY, USA a139-1421 aHorzel, J1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/zh-hans/node/33100466nas a2200133 4500008004100000245009000041210006900131260002200200300001600222100001300238700001500251700001700266856004900283 1997 eng d00aSurface texturing using reactive ion etching for multicrystalline silicon solar cells0 aSurface texturing using reactive ion etching for multicrystallin aNew York, NY, USA a1451, 47-501 aFukui, K1 aInomata, Y1 aShirasawa, K uhttps://www.pveducation.org/zh-hans/node/31100462nas a2200145 4500008004100000245007400041210006900115300001200184490000700196100001400203700001400217700001900231700001700250856004900267 1995 eng d00aOn some thermodynamic aspects of photovoltaic solar energy conversion0 asome thermodynamic aspects of photovoltaic solar energy conversi a201-2220 v361 aBaruch, P1 aDe Vos, A1 aLandsberg, P T1 aParrott, J E uhttps://www.pveducation.org/zh-hans/node/27900366nas a2200133 4500008004100000022001400041245004200055210004000097260001200137300001200149490000800161100001400169856004900183 1995 eng d a1095-920300aSun’s Role in Warming Is Discounted0 aSun s Role in Warming Is Discounted c04/1995 a28 - 290 v2681 aKerr, R A uhttps://www.pveducation.org/zh-hans/node/33700557nas a2200157 4500008004100000022001400041245009200055210006900147300001400216490000700230100001500237700001800252700001400270700001400284856010100298 1992 eng d a0927-024800aA simple and effective light trapping technique for polycrystalline silicon solar cells0 asimple and effective light trapping technique for polycrystallin a345 - 3560 v261 aWilleke, G1 aNussbaumer, H1 aBender, H1 aBucher, E uhttp://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c5100397nam a2200097 4500008004100000245007400041210006900115260004500184100002100229856004900250 1992 eng d00aSolar Cells - Operating Principles, Technology and System Application0 aSolar Cells Operating Principles Technology and System Applicati aKensington, AustraliabUniversity of NSW1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/32200397nas a2200097 4500008004100000245011400041210006900155100001200224700001400236856004900250 1991 eng d00aA Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources0 aSensitivity Analysis of the Spectral Mismatch Correction Procedu1 aKing, D1 aHansen, B uhttps://www.pveducation.org/zh-hans/node/34000351nas a2200121 4500008004100000245004600041210004400087300000900131100001300140700001300153700001400166856004900180 1988 eng d00aSOLAR SIMULATION - PROBLEMS AND SOLUTIONS0 aSOLAR SIMULATION PROBLEMS AND SOLUTIONS a10871 aEmery, K1 aMyers, D1 aRummel, S uhttps://www.pveducation.org/zh-hans/node/30600346nam a2200109 4500008004100000245004800041210004700089260002600136100001000162700001500172856004900187 1983 eng d00aSolar Cells: From Basic to Advanced Systems0 aSolar Cells From Basic to Advanced Systems aNew YorkbMcGraw-Hill1 aHu, C1 aWhite, R M uhttps://www.pveducation.org/zh-hans/node/33200443nas a2200133 4500008004100000020001800041245007400059210006900133260001800202300000800220520001100228100002100239856004900260 1982 eng d a0-85823-580-300aSolar Cells: Operating Principles, Technology and System Applications0 aSolar Cells Operating Principles Technology and System Applicati bPrentice-Hall a2743 aThe present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells
1 aBackus, C E uhttps://www.pveducation.org/zh-hans/node/27700471nas a2200133 4500008004100000022001400041245006100055210006100116300001200177490000700189100001900196700002100215856010100236 1976 eng d a0038-092X00aSolar thermal power system based on optical transmission0 aSolar thermal power system based on optical transmission a31 - 390 v181 aVant-Hull, L L1 aHildebrandt, A F uhttp://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f8969649800352nas a2200109 4500008004100000245005700041210005700098490000600155100001200161700002000173856004900193 1963 eng d00aSeries Resistance Effects on Solar Cell Measurements0 aSeries Resistance Effects on Solar Cell Measurements0 v31 aWolf, M1 aRauschenbach, H uhttps://www.pveducation.org/zh-hans/node/41000305nas a2200097 4500008004100000245003700041210003600078260002900114100001500143856004900158 1959 eng d00aSemiconductor Devices, Chapter 80 aSemiconductor Devices Chapter 8 aNew JerseybVan Nostrand1 aShive, J N uhttps://www.pveducation.org/zh-hans/node/37900850nas a2200133 4500008004100000245006000041210006000101300000800161490000700169520045300176100002200629700001400651856005100665 1952 eng d00aStatistics of the Recombinations of Holes and Electrons0 aStatistics of the Recombinations of Holes and Electrons a8350 v873 aThe statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.1 aShockley, William1 aRead, W T uhttp://link.aps.org/doi/10.1103/PhysRev.87.83500378nas a2200109 4500008004100000245007600041210006900117300001200186490000800198100001300206856004900219 1923 eng d00aSur les rayons β secondaires produits dans un gaz par des rayons X0 aSur les rayons beta secondaires produits dans un gaz par des ray a169-1710 v1771 aAuger, P uhttps://www.pveducation.org/zh-hans/node/276