01300nas a2200145   4500008004100000245009100041210006900132300001500201490000700216520074700223100002500970700001600995700001401011856012901025       2001                        eng d00aImprovements in numerical modelling of highly injected crystalline silicon solar cells0 aImprovements in numerical modelling of highly injected crystalli  a149-155(7)0 v653 a<p> We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n<sub>i</sub>=1.00x10<sup>10</sup>cm<sup>-3</sup>, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of n<sub>i</sub> if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.</p>1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G  uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1