01817nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004901586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/zh-hans/node/52500590nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004900347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/zh-hans/node/29700929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
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360 v661 aZhao, J1 aWang, Aihua1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/41400574nas a2200181 4500008004100000022001400041245006200055210006200117300001400179490000700193653001200200100002200212700001200234700001300246700001600259700001600275856010100291 2001 eng d a0927-024800aDegradation of carrier lifetime in Cz silicon solar cells0 aDegradation of carrier lifetime in Cz silicon solar cells a219 - 2290 v6510aDefects1 aGlunz, Stefan, W.1 aRein, S1 aWarta, W1 aKnobloch, J1 aWettling, W uhttp://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f00441nas a2200121 4500008004100000245009500041210006900136260002000205100001200225700001200237700002100249856004900270 1998 eng d00a19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface0 a198 Efficient Multicrystalline Silicon Solar Cells with Honeycom aVienna, Austria1 aZhao, J1 aWang, A1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/41300659nas a2200205 4500008004100000245011400041210006900155260000800224300001400232490000700246653002900253653001200282653001600294653002000310100001800330700001600348700002100364700002400385856004400409 1998 eng d00a19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells0 a198 efficient quothoneycombquot textured multicrystalline and 24 bAIP a1991-19930 v7310aelemental semiconductors10aSILICON10asolar cells10asurface texture1 aZhao, Jianhua1 aWang, Aihua1 aGreen, Martin, A1 aFerrazza, Francesca uhttp://link.aip.org/link/?APL/73/1991/100543nas a2200181 4500008004100000245008200041210006900123300001400192490000600206100001200212700001200224700001100236700001300247700001500260700001600275700002100291856004900312 1997 eng d00a20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race0 a20000 PERL silicon cells for the 1996 World Solar Challenge sola a269–2760 v51 aZhao, J1 aWang, A1 aYun, F1 aZhang, G1 aRoche, D M1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/41600452nas a2200121 4500008004100000245009400041210006900135260001900204100002100223700001600244700002100260856004900281 1993 eng d00aA New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells0 aNew Method for the Accurate Measurements of the Lumped Series Re aLouisville, KY1 aAberle, Armin, G1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/27200557nas a2200157 4500008004100000022001400041245009200055210006900147300001400216490000700230100001500237700001800252700001400270700001400284856010100298 1992 eng d a0927-024800aA simple and effective light trapping technique for polycrystalline silicon solar cells0 asimple and effective light trapping technique for polycrystallin a345 - 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