00504nas a2200157 4500008004100000022001400041245006700055210006600122260001600188300001400204490000600218100002800224700002400252700002100276856004900297 2012 eng d a2156-338100aIsotextured Silicon Solar Cell Analysis and Modeling 1: Optics0 aIsotextured Silicon Solar Cell Analysis and Modeling 1 Optics cJan-10-2012 a457 - 4640 v21 aBaker-Finch, Simeon, C.1 aMcIntosh, Keith, R.1 aTerry, Mason, L. uhttps://www.pveducation.org/zh-hans/node/53301332nas a2200133 4500008004100000020002200041245006000063210005900123260002600182520088900208100002401097700002801121856004901149 2012 eng d a978-1-4673-0064-300aOPAL 2: Rapid optical simulation of silicon solar cells0 aOPAL 2 Rapid optical simulation of silicon solar cells aAustin, TX, USAbIEEE3 aThe freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.1 aMcIntosh, Keith, R.1 aBaker-Finch, Simeon, C. uhttps://www.pveducation.org/zh-hans/node/53200590nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004900347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/zh-hans/node/29700448nas a2200133 4500008004100000245007600041210006900117100001800186700001500204700001200219700001800231700001600249856004900265 2007 eng d00aLow Cost, High Volume Production of >22% Efficiency Silicon Solar Cells0 aLow Cost High Volume Production of 22 Efficiency Silicon Solar C1 aDe Ceuster, D1 aCousins, P1 aRose, D1 aCudzinovic, M1 aMulligan, W uhttps://www.pveducation.org/zh-hans/node/30000512nas a2200157 4500008004100000022001300041245009900054210006900153260001200222300001600234490000700250100001300257700001300270700002200283856004900305 2007 eng d a0927024800aA review and comparison of different methods to determine the series resistance of solar cells0 areview and comparison of different methods to determine the seri c11/2007 a1698 - 17060 v911 aPYSCH, D1 aMette, A1 aGlunz, Stefan, W. uhttps://www.pveducation.org/zh-hans/node/36800442nas a2200121 4500008004100000245012200041210006900163300001200232490000700244100001300251700000700264856004900271 2007 eng d00aSeries resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste0 aSeries resistance characterization of industrial silicon solar c a493-5050 v151 aMette, A1 aal uhttps://www.pveducation.org/zh-hans/node/35300548nas a2200157 4500008004100000245006600041210006500107260002300172300001600195100002000211700001800231700002200249700002200271700002200293856007500315 2006 eng d00aLow Light Performance of Mono-Crystalline Silicon Solar Cells0 aLow Light Performance of MonoCrystalline Silicon Solar Cells aWaikoloa, HIc2006 a1312–13141 aBunea, Gabriela1 aWilson, Karen1 aMeydbray, Yevgeny1 aCampbell, Matthew1 aCeuster, Denis De uhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=100459nas a2200133 4500008004100000245007300041210006900114100002800183700001500211700001800226700001600244700001600260856004900276 2003 eng d00aDependence of aluminium alloying on solar cell processing conditions0 aDependence of aluminium alloying on solar cell processing condit1 aHonsberg, Christiana, B1 aAnwar, K K1 aMehrvarz, H R1 aCotter, J E1 aWenham, S R uhttps://www.pveducation.org/zh-hans/node/33000809nas a2200253 4500008004100000245012200041210006900163260000800232300001400240490000700254653002000261653002100281653001900302653003200321653002900353653001500382653002200397653001200419653001600431100002200447700002200469700002000491856004400511 2001 eng d00aOn the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon0 ause of a biaslight correction for trapping effects in photocondu bAIP a2772-27780 v8910aCARRIER DENSITY10acarrier lifetime10aelectron traps10aelectron-hole recombination10aelemental semiconductors10ahole traps10aphotoconductivity10aSILICON10asolar cells1 aMacdonald, Daniel1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?JAP/89/2772/100366nas a2200097 4500008004100000245006900041210006300110100001800173700002800191856004900219 2000 eng d00aThe Influence of Edge Recombination on a Solar Cell’s IV Curve0 aInfluence of Edge Recombination on a Solar Cell s IV Curve1 aMcIntosh, K R1 aHonsberg, Christiana, B uhttps://www.pveducation.org/zh-hans/node/35100393nas a2200109 4500008004100000245007300041210006900114260001600183100001800199700001700217856004900234 2000 eng d00aOutdoor measurement of 28% efficiency for a mini-concentrator module0 aOutdoor measurement of 28 efficiency for a miniconcentrator modu aDenver, USA1 aO’Neil, M J1 aMcDanal, A J uhttps://www.pveducation.org/zh-hans/node/36000453nas a2200133 4500008004100000020001800041245002200059210002200081250001900103260004300122300000800165100002000173856012600193 2000 eng d a0-471-98853-700aSolar Electricity0 aSolar Electricity aSecond Edition aChichester, EnglandbJohn Wiley & Sons a2711 aMarkvart, Tomas uhttp://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-100522nas a2200157 4500008004100000245009100041210006900132260002200201300001800223100001500241700001600256700001600272700001200288700001500300856004900315 1997 eng d00aIsotropic texturing of multicrystalline silicon wafers with acidic texturing solutions0 aIsotropic texturing of multicrystalline silicon wafers with acid aNew York, NY, USA a167-170, 14511 aEinhaus, R1 aVazsonyi, E1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/zh-hans/node/30400499nas a2200157 4500008004100000245007200041210006900113300001200182490000700194100001600201700002000217700001400237700001700251700002400268856004900292 1997 eng d00aLow-cost industrial technologies of crystalline silicon solar cells0 aLowcost industrial technologies of crystalline silicon solar cel a711-7300 v851 aSzlufcik, J1 aSivoththaman, S1 aNlis, J F1 aMertens, R P1 aVan-Overstraeten, R uhttps://www.pveducation.org/zh-hans/node/39400532nas a2200157 4500008004100000022001300041245010300054210006900157260001600226300001400242490000800256100002100264700002100285700001900306856004900325 1997 eng d a0031896500aPreparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications0 aPreparation of Zinc Selenide Thin Films by Electrodeposition Tec cJan-10-1997 aR11 - R120 v1631 aChandramohan, R.1 aSanjeeviraja, C.1 aMahalingam, T. uhttps://www.pveducation.org/zh-hans/node/53000437nas a2200145 4500008004100000245005600041210005400097260002200151300001200173100001400185700001600199700001200215700001500227856004900242 1997 eng d00aA simple processing sequence for selective emitters0 asimple processing sequence for selective emitters aNew York, NY, USA a139-1421 aHorzel, J1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/zh-hans/node/33101011nas a2200157 4500008004100000022001300041245008400054210006900138260001600207300000900223490000700232520051500239100002700754700002300781856004900804 1993 eng d a0021897900aAccurate measurements of the silicon intrinsic carrier density from 78 to 340 K0 aAccurate measurements of the silicon intrinsic carrier density f cJan-01-1993 a32930 v743 aThe intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.1 aMisiakos, Konstantinos1 aTsamakis, Dimitris uhttps://www.pveducation.org/zh-hans/node/54200439nas a2200145 4500008004100000022001300041245006000054210005800114300001600172490000700188100001400195700001600209700001900225856004900244 1990 eng d a0018938300aMinority-carrier transport parameters in n-type silicon0 aMinoritycarrier transport parameters in ntype silicon a1314 - 13220 v371 aWang, C H1 aMisiakos, K1 aNeugroschel, A uhttps://www.pveducation.org/zh-hans/node/40201652nas a2200181 4500008004100000022001600041245009500057210006900152300001400221490000700235520102700242100001901269700002101288700001801309700002201327700002001349856010101369 1990 eng d a{0038-092X}00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271–2890 v443 a
This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
1 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e00611nas a2200169 4500008004100000022001400041245009500055210006900150300001400219490000700233100001900240700002100259700001800280700002200298700002000320856010100340 1990 eng d a0038-092X00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271 - 2890 v441 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e00351nas a2200121 4500008004100000245004600041210004400087300000900131100001300140700001300153700001400166856004900180 1988 eng d00aSOLAR SIMULATION - PROBLEMS AND SOLUTIONS0 aSOLAR SIMULATION PROBLEMS AND SOLUTIONS a10871 aEmery, K1 aMyers, D1 aRummel, S uhttps://www.pveducation.org/zh-hans/node/30601684nas a2200265 4500008004100000022001400041245011300055210006900168300001200237490001000249520089300259653001201152653001001164653002001174653002101194653002301215653002901238653003301267653001501300653001201315100001501327700001401342700001301356856004901369 1983 eng d a0018-938300aModeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon0 aModeling of carrier mobility against carrier concentration in ar a764–90 vED-303 aNew carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
10aarsenic10aboron10aCARRIER DENSITY10acarrier mobility10adigital simulation10aelemental semiconductors10aheavily doped semiconductors10aphosphorus10aSILICON1 aMasetti, G1 aSeveri, M1 aSolmi, S uhttps://www.pveducation.org/zh-hans/node/35000504nas a2200133 4500008004100000245010000041210006900141260006100210100001800271700001100289700000800300700001300308856004900321 1981 eng d00aThe Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon0 aRelationship Between Resistivity and Dopant Density for Phosphor bU.S. Department of Commerce National Bureau of Standards1 aThurber, W, R1 aMattis1 aLiu1 aFilliben uhttps://www.pveducation.org/zh-hans/node/39600652nas a2200229 4500008004100000245006800041210006600109260000800175300001400183490000800197653001000205653002700215653001600242653001700258653002500275653001200300100001800312700001600330700001300346700001800359856004500377 1980 eng d00aResistivity-Dopant Density Relationship for Boron-Doped Silicon0 aResistivityDopant Density Relationship for BoronDoped Silicon bECS a2291-22940 v12710aboron10aelectrical resistivity10aHall effect10ahole density10asemiconductor doping10aSILICON1 aThurber, W, R1 aMattis, R L1 aLiu, Y M1 aFilliben, J J uhttp://link.aip.org/link/?JES/127/2291/100765nas a2200265 4500008004100000245007300041210006900114260000800183300001400191490000800205653001200213653002700225653002200252653001600274653003200290653001500322653001500337653002500352653001200377100001800389700001600407700001300423700001800436856004500454 1980 eng d00aResistivity-Dopant Density Relationship for Phosphorus-Doped Silicon0 aResistivityDopant Density Relationship for PhosphorusDoped Silic bECS a1807-18120 v12710adensity10aelectrical resistivity10aelectron mobility10aHall effect10aneutron activation analysis10aphosphorus10aphotometry10asemiconductor doping10aSILICON1 aThurber, W, R1 aMattis, R L1 aLiu, Y M1 aFilliben, J J uhttp://link.aip.org/link/?JES/127/1807/100307nas a2200109 4500008004100000245003900041210003900080300001000119490000700129100001200136856004900148 1979 eng d00aSolar Power for Telecommunications0 aSolar Power for Telecommunications a20-440 v291 aMack, M uhttps://www.pveducation.org/zh-hans/node/34800316nam a2200109 4500008004100000245002500041210002500066260003400091100001600125700001600141856004900157 1976 eng d00aApplied Solar Energy0 aApplied Solar Energy bAddison Wesley Publishing Co.1 aMeinel, A B1 aMeinel, M P uhttps://www.pveducation.org/zh-hans/node/352