01817nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004901586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/zh-hans/node/52500929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
10aConversion efficiency10aEnergy conversion10asolar cells10aSolar energy10aSolar power generation1 aGreen, Martin, A1 aEmery, Keith1 aHishikawa, Yoshihiro1 aWarta, Wilhelm uhttp://dx.doi.org/10.1002/pip.97400582nas a2200193 4500008004100000245008300041210006900124100001500193700001300208700001500221700001400236700001500250700001300265700001500278700001400293700001800307700001400325856004900339 2009 eng d00aMETAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY0 aMETAMORPHIC GaInPGaInAsGe TRIPLEJUNCTION SOLAR CELLS WITH 41 EFF1 aDimroth, F1 aGuter, W1 aSchöne, J1 aWelser, E1 aSteiner, M1 aOliva, E1 aWekkeli, A1 aSiefer, G1 aPhilipps, S P1 aBett, A W uhttps://www.pveducation.org/zh-hans/node/30100394nas a2200109 4500008004100000245008500041210006900126300001200195490000700207100002100214856004900235 2009 eng d00aThe path to 25% silicon solar cell efficiency: History of silicon cell evolution0 apath to 25 silicon solar cell efficiency History of silicon cell a183-1890 v171 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/31701286nas a2200169 4500008004100000022001400041245010500055210006900160300001600229490000700245520069800252653002700950653002300977653002401000100002101024856007101045 2008 eng d a0927-024800aSelf-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients0 aSelfconsistent optical parameters of intrinsic silicon at 300 K a1305–13100 v923 aAn updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.10aAbsorption coefficient10aoptical properties10aSILICON SOLAR CELLS1 aGreen, Martin, A uhttp://www.sciencedirect.com/science/article/pii/S092702480800215800519nas a2200169 4500008004100000020001800041245002600059210002600085260002600111300000800137520001100145100001600156700002100172700001400193700001500207856012700222 2007 eng d a1-84407-401-300aApplied Photovoltaics0 aApplied Photovoltaics aLondon, UKbEarthscan a3173 a
1 aWenham, S R1 aGreen, Martin, A1 aWatt, M E1 aCorkish, R uhttp://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-100512nas a2200157 4500008004100000022001300041245009900054210006900153260001200222300001600234490000700250100001300257700001300270700002200283856004900305 2007 eng d a0927024800aA review and comparison of different methods to determine the series resistance of solar cells0 areview and comparison of different methods to determine the seri c11/2007 a1698 - 17060 v911 aPYSCH, D1 aMette, A1 aGlunz, Stefan, W. uhttps://www.pveducation.org/zh-hans/node/36800499nas a2200133 4500008004100000020001800041245004100059210004100100260003000141300000800171100002300179700002500202856013800227 2005 eng d a3-540-23676-700aPhotovoltaic Solar Energy Generation0 aPhotovoltaic Solar Energy Generation aBerlin, GermanybSpringer a2321 aGoetzberger, Adolf1 aHoffmann, Volker Uwe uhttp://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-201448nas a2200181 4500008004100000022001300041245010300054210006900157260001600226300000900242490000700251520087500258100002501133700002001158700002001178700001901198856004901217 2003 eng d a0021897900aReassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing0 aReassessment of the intrinsic carrier density in crystalline sil cJan-01-2003 a15980 v933 aThe commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.1 aAltermatt, Pietro, P1 aSchenk, Andreas1 aGeelhaar, Frank1 aHeiser, Gernot uhttps://www.pveducation.org/zh-hans/node/54300509nas a2200145 4500008004100000022001300041245012300054210006900177300001200246490000700258100001200265700001600277700002100293856004900314 2001 eng d a0927024800a24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates0 a245 efficiency PERT silicon solar cells on SEH MCZ substrates an a27 - 360 v661 aZhao, J1 aWang, Aihua1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/41400574nas a2200181 4500008004100000022001400041245006200055210006200117300001400179490000700193653001200200100002200212700001200234700001300246700001600259700001600275856010100291 2001 eng d a0927-024800aDegradation of carrier lifetime in Cz silicon solar cells0 aDegradation of carrier lifetime in Cz silicon solar cells a219 - 2290 v6510aDefects1 aGlunz, Stefan, W.1 aRein, S1 aWarta, W1 aKnobloch, J1 aWettling, W uhttp://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f01088nas a2200157 4500008004100000022001300041245008500054210006900139260001600208300001400224490000700238520059300245100002200838700002100860856004900881 2001 eng d a0927024800aHigh performance light trapping textures for monocrystalline silicon solar cells0 aHigh performance light trapping textures for monocrystalline sil cJan-01-2001 a369 - 3750 v653 aTwo novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.1 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/52600441nas a2200121 4500008004100000245009500041210006900136260002000205100001200225700001200237700002100249856004900270 1998 eng d00a19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface0 a198 Efficient Multicrystalline Silicon Solar Cells with Honeycom aVienna, Austria1 aZhao, J1 aWang, A1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/41300659nas a2200205 4500008004100000245011400041210006900155260000800224300001400232490000700246653002900253653001200282653001600294653002000310100001800330700001600348700002100364700002400385856004400409 1998 eng d00a19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells0 a198 efficient quothoneycombquot textured multicrystalline and 24 bAIP a1991-19930 v7310aelemental semiconductors10aSILICON10asolar cells10asurface texture1 aZhao, Jianhua1 aWang, Aihua1 aGreen, Martin, A1 aFerrazza, Francesca uhttp://link.aip.org/link/?APL/73/1991/100543nas a2200181 4500008004100000245008200041210006900123300001400192490000600206100001200212700001200224700001100236700001300247700001500260700001600275700002100291856004900312 1997 eng d00a20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race0 a20000 PERL silicon cells for the 1996 World Solar Challenge sola a269–2760 v51 aZhao, J1 aWang, A1 aYun, F1 aZhang, G1 aRoche, D M1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/41600426nas a2200145 4500008004100000022001300041245005300054210005300107260000900160300001400169490000600183100002100189700002100210856004900231 1995 eng d a1099159X00aOptical properties of intrinsic silicon at 300 K0 aOptical properties of intrinsic silicon at 300 K c1995 a189 - 1920 v31 aGreen, Martin, A1 aKeevers, Mark, J uhttps://www.pveducation.org/zh-hans/node/31600489nas a2200157 4500008004100000022001300041245007400054210006900128260000900197300000900206490000700215100001800222700002100240700002100261856004900282 1994 eng d a0021897900aDepartures from the principle of superposition in silicon solar cells0 aDepartures from the principle of superposition in silicon solar c1994 a79200 v761 aRobinson, S J1 aAberle, Armin, G1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/37100425nam a2200121 4500008004100000020001500041245007700056210006900133250000600202260002300208100002300231856004900254 1994 eng d a047158005800a{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition0 aVLSI Fabrication Principles Silicon and Gallium Arsenide 2nd Edi a2 bWiley-Interscience1 aGhandhi, Sorab, K. uhttps://www.pveducation.org/zh-hans/node/52200452nas a2200121 4500008004100000245009400041210006900135260001900204100002100223700001600244700002100260856004900281 1993 eng d00aA New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells0 aNew Method for the Accurate Measurements of the Lumped Series Re aLouisville, KY1 aAberle, Armin, G1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/27200397nam a2200097 4500008004100000245007400041210006900115260004500184100002100229856004900250 1992 eng d00aSolar Cells - Operating Principles, Technology and System Application0 aSolar Cells Operating Principles Technology and System Applicati aKensington, AustraliabUniversity of NSW1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/32200733nas a2200241 4500008004100000245008500041210006900126260000800195300001200203490000700215653002000222653002200242653002000264653002300284653002200307653002400329653001200353653001900365653002700384100001600411700002100427856004300448 1991 eng d00aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f bAIP a846-8540 v7010aCARRIER DENSITY10aIV CHARACTERISTIC10aJUNCTION DIODES10aMEDIUM TEMPERATURE10aMINORITY CARRIERS10aSANDIA LABORATORIES10aSILICON10aSILICON DIODES10aTEMPERATURE DEPENDENCE1 aSproul, A B1 aGreen, Martin, A uhttp://link.aip.org/link/?JAP/70/846/100464nas a2200145 4500008004100000022001300041245008500054210006900139260000900208300000800217490000700225100001600232700002100248856004900269 1991 eng d a0021897900aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f c1991 a8460 v701 aSproul, A B1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/39000423nas a2200145 4500008004100000245005100041210005100092300001200143100001200155700001300167700001100180700002100191700001600212856004900228 1991 eng d00aImprovements in Silicon Solar Cell Performance0 aImprovements in Silicon Solar Cell Performance a399-4021 aZhao, J1 aA., Wang1 aDai, X1 aGreen, Martin, A1 aWenham, S R uhttps://www.pveducation.org/zh-hans/node/41500508nam a2200145 4500008004100000245006700041210006300108260005500171100002300226700002100249700001200270700001600282700001500298856004900313 1991 eng d00aThe Role of Photovoltaics in Reducing Greenhouse Gas Emissions0 aRole of Photovoltaics in Reducing Greenhouse Gas Emissions aCanberrabAustralian Government Publishing Service1 aBlakers, Andrew, W1 aGreen, Martin, A1 aLeo, T.1 aOuthred, H.1 aRobins, B. uhttps://www.pveducation.org/zh-hans/node/28500507nas a2200181 4500008004100000245005400041210005300095300001200148490000600160100001700166700001400183700001100197700001600208700001600224700001500240700002100255856004900276 1990 eng d00a18% efficient polycrystalline silicon solar cells0 a18 efficient polycrystalline silicon solar cells a678-6800 v11 aNarayanan, S1 aZolper, J1 aYun, F1 aWenham, S R1 aSproul, A B1 aChong, C M1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/35500479nas a2200157 4500008004100000022001300041245007600054210006900130260000900199300000800208490000700216100001600223700002100239700001200260856004900272 1990 eng d a0003695100aImproved value for the silicon intrinsic carrier concentration at 300 K0 aImproved value for the silicon intrinsic carrier concentration a c1990 a2550 v571 aSproul, A B1 aGreen, Martin, A1 aZhao, J uhttps://www.pveducation.org/zh-hans/node/38901165nas a2200121 4500008004100000245003300041210003200074260002600106300000800132520080900140100002100949856007300970 1990 eng d00aPhotovoltaics: Coming of Age0 aPhotovoltaics Coming of Age aOrlando, USAc05/1990 a1-83 aThe history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.1 aGreen, Martin, A uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=11158200524nas a2200157 4500008004100000022001300041245008700054210006900141300000900210490000700219100002000226700003000246700002200276700002100298856004700319 1989 eng d a0003695100a16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell0 a167 efficient laser textured buried contact polycrystalline sili a23630 v551 aZolper, John, C1 aNarayanan, Srinivasamohan1 aWenham, Stuart, R1 aGreen, Martin, A uhttp://apl.aip.org/applab/v55/i22/p2363_s100317nas a2200109 4500008004100000245003000041210003000071260001300101100002200114700002100136856005000157 1988 eng d00aBuried contact solar cell0 aBuried contact solar cell cFebruary1 aWenham, Stuart, R1 aGreen, Martin, A uhttp://www.freepatentsonline.com/4726850.html00449nas a2200145 4500008004100000022001300041245006300054210006300117260001600180300000800196490000700204100002200211700002100233856004900254 1987 eng d a0021897900aLight trapping properties of pyramidally textured surfaces0 aLight trapping properties of pyramidally textured surfaces cJan-01-1987 a2430 v621 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/52700373nas a2200109 4500008004100000245006700041210006700108300001200175490000600187100002100193856004900214 1982 eng d00aAccuracy of Analytical Expressions for Solar Cell Fill Factors0 aAccuracy of Analytical Expressions for Solar Cell Fill Factors a337-3400 v71 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/32100443nas a2200133 4500008004100000020001800041245007400059210006900133260001800202300000800220520001100228100002100239856004900260 1982 eng d a0-85823-580-300aSolar Cells: Operating Principles, Technology and System Applications0 aSolar Cells Operating Principles Technology and System Applicati bPrentice-Hall a2743 a
1 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/32000404nas a2200121 4500008004100000022001300041245006900054210006800123300001400191490000700205100002100212856004900233 1981 eng d a0038110100aSolar cell fill factors: General graph and empirical expressions0 aSolar cell fill factors General graph and empirical expressions a788 - 7890 v241 aGreen, Martin, A uhttps://www.pveducation.org/zh-hans/node/31900350nas a2200109 4500008004100000245006200041210005600103300000800159490000600167100001800173856004900191 1933 eng d00aThe Copper-Cuprous-Oxide Rectifier and Photoelectric Cell0 aCopperCuprousOxide Rectifier and Photoelectric Cell a1410 v51 aGrondahl, L O uhttps://www.pveducation.org/zh-hans/node/323