@article {Masetti1983,
	title = {Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon},
	journal = {IEEE Transactions on Electron Devices},
	volume = {ED-30},
	number = {7},
	year = {1983},
	note = {<p> Copyright 1983, {IEE}</p>},
	pages = {764{\textendash}9},
	abstract = {<p> New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values</p>},
	keywords = {arsenic, boron, CARRIER DENSITY, carrier mobility, digital simulation, elemental semiconductors, heavily doped semiconductors, phosphorus, SILICON},
	issn = {0018-9383},
	author = {G. Masetti and M. Severi and S. Solmi}
}
