@article {Cuevas2014,
	title = {The Recombination Parameter J0},
	journal = {Energy Procedia},
	volume = {55},
	year = {2014},
	month = {Jan-01-2014},
	pages = {53 - 62},
	abstract = {The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter.},
	issn = {18766102},
	doi = {10.1016/j.egypro.2014.08.073},
	url = {http://www.sciencedirect.com/science/article/pii/S1876610214012971$\#$}
}
@article {Richter2012,
	title = {Improved quantitative description of Auger recombination in crystalline silicon},
	journal = {Physical Review B},
	volume = {86},
	year = {2012},
	month = {Jan-10-2012},
	abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.},
	issn = {1098-0121},
	doi = {10.1103/PhysRevB.86.165202},
	author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas}
}
@article {Kerr2002,
	title = {General parameterization of Auger recombination in crystalline silicon},
	journal = {Journal of Applied Physics},
	volume = {91},
	number = {4},
	year = {2002},
	pages = {2473-2480},
	publisher = {AIP},
	keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON},
	doi = {10.1063/1.1432476},
	url = {http://link.aip.org/link/?JAP/91/2473/1},
	author = {Mark J Kerr and Andr{\'e}s Cuevas}
}
@article {Kerr2002,
	title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements},
	journal = {Journal of Applied Physics},
	volume = {91},
	year = {2002},
	note = {<br />},
	month = {2002},
	pages = {399},
	abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.},
	issn = {00218979},
	doi = {10.1063/1.1416134},
	author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton}
}
@article {Macdonald2001,
	title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon},
	journal = {Journal of Applied Physics},
	volume = {89},
	number = {5},
	year = {2001},
	pages = {2772-2778},
	publisher = {AIP},
	keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells},
	doi = {10.1063/1.1346652},
	url = {http://link.aip.org/link/?JAP/89/2772/1},
	author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas}
}
@conference {Sinton2000,
	title = {A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization},
	booktitle = {16th European Photovoltaic Solar Energy Conference},
	year = {2000},
	month = {05/2000},
	pages = {1152{\textendash}1155},
	address = {Glasgow, Scotland},
	author = {Sinton, R.A. and Andr{\'e}s Cuevas}
}
@article {Sinton1996,
	title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data},
	journal = {Applied Physics Letters},
	volume = {69},
	number = {17},
	year = {1996},
	pages = {2510-2512},
	publisher = {AIP},
	keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS},
	doi = {10.1063/1.117723},
	url = {http://link.aip.org/link/?APL/69/2510/1},
	author = {Ronald A. Sinton and Andr{\'e}s Cuevas}
}
