@article {Thurber1980boron,
	title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon},
	journal = {Journal of The Electrochemical Society},
	volume = {127},
	number = {10},
	year = {1980},
	note = {<br />},
	pages = {2291-2294},
	publisher = {ECS},
	keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON},
	doi = {10.1149/1.2129394},
	url = {http://link.aip.org/link/?JES/127/2291/1},
	author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben}
}
@article {Thurber1980phos,
	title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon},
	journal = {Journal of The Electrochemical Society},
	volume = {127},
	number = {8},
	year = {1980},
	pages = {1807-1812},
	publisher = {ECS},
	keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON},
	doi = {10.1149/1.2130006},
	url = {http://link.aip.org/link/?JES/127/1807/1},
	author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben}
}
