@article {Avellaneda2008,
	title = {Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition},
	journal = {Journal of The Electrochemical Society},
	volume = {155},
	year = {2008},
	month = {Jan-01-2008},
	pages = {D517},
	abstract = {Polycrystalline thin films (100{\textendash}450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6{\texttimes}10-6 (Ωcm)-1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500{\textdegree}C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550{\textdegree}C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, \~{}1 (Ωcm)-1 . Photovoltaic effect in different structures involving these films is presented. },
	issn = {00134651},
	doi = {10.1149/1.2917198},
	url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198}
}
