Submitted by drupal on Sat, 04/28/2012 - 22:47 W. D. Eades и Swanson, R. M., «Calculation of surface generation and recombination velocities at the Si-SiO2 interface», Journal of Applied Physics, т. 58, с. 4267, 1985. Log in or register to post comments DOI BibTeX RTF Tagged MARC EndNote XML RIS