Biblio

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1939
F. C. Nix и Treptwo, A. W., «A Thallous Sulphide Photo EMF Cell», Journal Opt. Society of America, т. 29, с. 457, 1939.
1980
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
1981
W. R. Thurber, Mattis,, Liu,, и Filliben, «The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon». U.S. Department of Commerce National Bureau of Standards, 1981.
1984
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
1993
K. Misiakos и Tsamakis, D., «Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K», Journal of Applied Physics, т. 74, № 5, с. 3293, 1993.
2005
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., и Uraoka, Y., «Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence», Applied Physics Letters, т. 86, с. 262108, 2005.
2010
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
2012
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.