Biblio

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2012
S. M. Hanasoge, Duvall, T. L., и Sreenivasan, K. R., «From the Cover: Anomalously weak solar convection», Proceedings of the National Academy of Sciences, т. 109, № 30, с. 11928 - 11932, 2012.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
2010
P. J. Cousins и др., «Gen III: Improved Performance at Lower Cost», в 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
2009
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
2006
D. Schroder, Semiconductor material and device characterization, 3rd editionй изд. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
2005
R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, с. 889-94, 2005.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
2004
J. Henrie, Kellis, S., Schultz, S., и Hawkins, A., «Electronic color charts for dielectric films on silicon», Optics Express, т. 12, с. 1464–1469, 2004.
2003
P. P. Altermatt, Schenk, A., Geelhaar, F., и Heiser, G., «Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing», Journal of Applied Physics, т. 93, № 3, с. 1598, 2003.
2002
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
2001
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
D. Macdonald, Sinton, R. A., и Cuevas, A., «On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon», Journal of Applied Physics, т. 89, с. 2772-2778, 2001.
2000
J. Schmidt, Kerr, M. J., и Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, т. 88, с. 1494-1497, 2000.
R. A. Sinton и Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», в 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, с. 1152–1155.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
1997
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
R. Chandramohan, Sanjeeviraja, C., и Mahalingam, T., «Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications», physica status solidi (a), т. 163, № 2, с. R11 - R12, 1997.
J. Horzel, Szlufcik, J., Nijs, J., и Mertens, R., «A simple processing sequence for selective emitters», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 139-142, 1997.
K. Fukui, Inomata, Y., и Shirasawa, K., «Surface texturing using reactive ion etching for multicrystalline silicon solar cells», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 1451, 47-50, 1997.

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