Biblio

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Author Title Type [ Year(Desc)]
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1950
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
1952
W. Shockley и Read, W. T., «Statistics of the Recombinations of Holes and Electrons», Physical Review, т. 87, с. 835, 1952.
1958
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
1959
J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
1961
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
1973
E. Y. Wang, Yu, F. T. S., Sims, V. L., Brandhorst, E. W., и Broder, J. D., «Optimum Design of Anti-reflection coating for silicon solar cells», 10th IEEE Photovoltaic Specialists Conference. с. 168-171, 1973.
1978
H. B. Serreze, «Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations», 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, с. 1-8, 1978.
1983
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
S. M. Hu, Fahey, P., и Sutton, P., «On Phosphorus Diffusion in Silicon», On Phosphorus Diffusion in Silicon, т. 54, с. 6912-6922, 1983.
1984
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
1985
W. D. Eades и Swanson, R. M., «Calculation of surface generation and recombination velocities at the Si-SiO2 interface», Journal of Applied Physics, т. 58, с. 4267, 1985.
R. Sekuler и Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
1986
J. R. G. Ross и Smokler, M. I., «Flat-Plate Solar Array Project Final Report», с. 86-31, 1986.
1987
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
1990
S. Narayanan и др., «18% efficient polycrystalline silicon solar cells», Twenty First IEEE Photovoltaic Specialists Conference, т. 1. с. 678-680, 1990.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
1991
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.

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