Biblio

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Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is N  [Clear All Filters]
1939
F. C. Nix и Treptwo, A. W., «A Thallous Sulphide Photo EMF Cell», Journal Opt. Society of America, т. 29, с. 457, 1939.
1989
J. C. Zolper, Narayanan, S., Wenham, S. R., и Green, M. A., «16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell», Applied Physics Letters, т. 55, с. 2363, 1989.
1990
S. Narayanan и др., «18% efficient polycrystalline silicon solar cells», Twenty First IEEE Photovoltaic Specialists Conference, т. 1. с. 678-680, 1990.
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
1991
J. H. Wohlgemuth и Narayanan, S., «Buried contact concentrator solar cells», Twenty Second IEEE Photovoltaic Specialists Conference, т. 1. с. 273-277, 1991.
1992
G. Willeke, Nussbaumer, H., Bender, H., и Bucher, E., «A simple and effective light trapping technique for polycrystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 26, с. 345 - 356, 1992.
1994
D. Jordan и Nagle, J. P., «Buried contact concentrator solar cells», Progress in Photovoltaics: Research and Applications, т. 2, с. 171-176, 1994.
1997
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
J. Horzel, Szlufcik, J., Nijs, J., и Mertens, R., «A simple processing sequence for selective emitters», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 139-142, 1997.
1998
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., и Narayanan, S., «Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells», 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
1999
H. Nagel, Berge, C., и Aberle, A. G., «Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors», Journal of Applied Physics, т. 86, с. 6218-6221, 1999.
2003
J. Nelson, «The Physics of Solar Cells», с. 355, 2003.
2010
NASA, «GISS Surface Temperature Analysis», 2010.
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.