Biblio

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2012
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.
K. R. McIntosh и Baker-Finch, S. C., «OPAL 2: Rapid optical simulation of silicon solar cells», в 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference, Austin, TX, USA, 2012.
2010
P. J. Cousins и др., «Gen III: Improved Performance at Lower Cost», в 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
P. J. Cousins и др., «Gen III: Improved Performance at Lower Cost», в 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
2007
D. De Ceuster, Cousins, P., Rose, D., Cudzinovic, M., и Mulligan, W., «Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells», 22nd European Photovoltaic Specialist Conference. 2007.
D. PYSCH, Mette, A., и Glunz, S. W., «A review and comparison of different methods to determine the series resistance of solar cells», Solar Energy Materials and Solar Cells, т. 91, с. 1698 - 1706, 2007.
A. Mette и et al, «Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste», Progress in Photovoltaics: Research and Applications, т. 15, с. 493-505, 2007.
2006
G. Bunea, Wilson, K., Meydbray, Y., Campbell, M., и Ceuster, D. D., «Low Light Performance of Mono-Crystalline Silicon Solar Cells», в 4th World Conference on Photovoltaic Energy Conference, Waikoloa, HI, 2006, с. 1312–1314.
2003
C. B. Honsberg, Anwar, K. K., Mehrvarz, H. R., Cotter, J. E., и Wenham, S. R., «Dependence of aluminium alloying on solar cell processing conditions», 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes. 2003.
2001
D. Macdonald, Sinton, R. A., и Cuevas, A., «On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon», Journal of Applied Physics, т. 89, с. 2772-2778, 2001.
2000
K. R. McIntosh и Honsberg, C. B., «The Influence of Edge Recombination on a Solar Cell’s IV Curve», 16th European Photovoltaic Solar Energy Conference. 2000.
M. J. O’Neil и McDanal, A. J., «Outdoor measurement of 28% efficiency for a mini-concentrator module», National Center for Photovoltaics Program Review Meeting. Denver, USA, 2000.
T. Markvart, «Solar Electricity», с. 271, 2000.
1997
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
R. Chandramohan, Sanjeeviraja, C., и Mahalingam, T., «Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications», physica status solidi (a), т. 163, № 2, с. R11 - R12, 1997.
J. Horzel, Szlufcik, J., Nijs, J., и Mertens, R., «A simple processing sequence for selective emitters», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 139-142, 1997.
1993
K. Misiakos и Tsamakis, D., «Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K», Journal of Applied Physics, т. 74, № 5, с. 3293, 1993.
1990
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
1988
K. Emery, Myers, D., и Rummel, S., «SOLAR SIMULATION - PROBLEMS AND SOLUTIONS», 20th IEEE PV Specialists Conference. с. 1087, 1988.
1983
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
1981
W. R. Thurber, Mattis,, Liu,, и Filliben, «The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon». U.S. Department of Commerce National Bureau of Standards, 1981.
1980
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.

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