Biblio

Export 10 results:
Author Title [ Type(Desc)] Year
Filters: First Letter Of Last Name is T  [Clear All Filters]
Journal Article
K. Misiakos и Tsamakis, D., «Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K», Journal of Applied Physics, т. 74, № 5, с. 3293, 1993.
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., и Uraoka, Y., «Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence», Applied Physics Letters, т. 86, с. 262108, 2005.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
F. C. Nix и Treptwo, A. W., «A Thallous Sulphide Photo EMF Cell», Journal Opt. Society of America, т. 29, с. 457, 1939.