Biblio

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Journal Article
S. J. Fonash, «Solar Cell Device Physics», с. 400, 2010.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
J. G. Fossum, «Physical operation of back-surface-field silicon solar cells», IEEE Transactions on Electron Devices, т. 24, с. 322 - 325, 1977.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., и Uraoka, Y., «Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence», Applied Physics Letters, т. 86, с. 262108, 2005.
S. M. Hu, Fahey, P., и Sutton, P., «On Phosphorus Diffusion in Silicon», On Phosphorus Diffusion in Silicon, т. 54, с. 6912-6922, 1983.
D. M. Chapin, Fuller, C. S., и Pearson, G. L., «A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power», Journal of Applied Physics, т. 25, с. 676-677, 1954.
C. E. Fritts, «On a New Form of Selenium Photocell», American J. of Science, т. 26, с. 465, 1883.
F. A. Lindholm, Fossum, J. G., и Burgess, E. L., «Application of the superposition principle to solar-cell analysis», IEEE Transactions on Electron Devices, т. 26, с. 165–171, 1979.
J. Zhao, Wang, A., Green, M. A., и Ferrazza, F., «19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells», Applied Physics Letters, т. 73, с. 1991-1993, 1998.
Conference Proceedings
K. Fukui, Inomata, Y., и Shirasawa, K., «Surface texturing using reactive ion etching for multicrystalline silicon solar cells», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 1451, 47-50, 1997.