Biblio
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Author Title [ Type] Year Filters: First Letter Of Last Name is F [Clear All Filters]
«The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon». U.S. Department of Commerce National Bureau of Standards, 1981.
«Solar Cell Device Physics», с. 400, 2010.
, «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
, «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
, «Physical operation of back-surface-field silicon solar cells», IEEE Transactions on Electron Devices, т. 24, с. 322 - 325, 1977.
, «Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence», Applied Physics Letters, т. 86, с. 262108, 2005.
, «On Phosphorus Diffusion in Silicon», On Phosphorus Diffusion in Silicon, т. 54, с. 6912-6922, 1983.
, «A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power», Journal of Applied Physics, т. 25, с. 676-677, 1954.
, «On a New Form of Selenium Photocell», American J. of Science, т. 26, с. 465, 1883.
, «Application of the superposition principle to solar-cell analysis», IEEE Transactions on Electron Devices, т. 26, с. 165–171, 1979.
, «19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells», Applied Physics Letters, т. 73, с. 1991-1993, 1998.
, «Surface texturing using reactive ion etching for multicrystalline silicon solar cells», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 1451, 47-50, 1997.
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