Biblio

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Journal Article
D. Macdonald, Sinton, R. A., и Cuevas, A., «On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon», Journal of Applied Physics, т. 89, с. 2772-2778, 2001.
M. J. Stocks, Carr, A. J., и Blakers, A. W., «Texturing of polycrystalline silicon», Solar Energy Materials and Solar Cells, т. 40, с. 33 - 42, 1996.
R. Chandramohan, Sanjeeviraja, C., и Mahalingam, T., «Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications», physica status solidi (a), т. 163, № 2, с. R11 - R12, 1997.
W. A. Pliskin и Conrad, E. E., «Nondestructive determination of thickness and refractive index of transparent films», IBM Journal of Research Devices, т. 8, с. 43–51, 1964.
D. M. Chapin, Fuller, C. S., и Pearson, G. L., «A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power», Journal of Applied Physics, т. 25, с. 676-677, 1954.
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
P. Campbell и Green, M. A., «Light trapping properties of pyramidally textured surfaces», Journal of Applied Physics, т. 62, № 1, с. 243, 1987.
E. Yablonovich и Cody, G. D., «Intensity Enhancement in Textured Optical Sheets for Solar Cells», IEEE Transactions on Electron Devices, т. ED-29, с. 300-305, 1982.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
P. Campbell и Green, M. A., «High performance light trapping textures for monocrystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, № 1-4, с. 369 - 375, 2001.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
M. J. Kerr и Cuevas, A., «General parameterization of Auger recombination in crystalline silicon», Journal of Applied Physics, т. 91, с. 2473-2480, 2002.
H. C. Card и Yang, E. S., «Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination», IEEE Transactions on Electron Devices, т. ED-24, с. 397-402, 1977.
J. Czochralski, «Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle», Zeitschrift für physikalische Chemie, т. 92, с. 219–221, 1918.
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
S. R. Wenham, Green, M. A., Watt, M. E., и Corkish, R., «Applied Photovoltaics», с. 317, 2007.
K. L. Luke и Cheng, L. - J., «Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity», Journal of Applied Physics, т. 61, с. 2282-2293, 1987.
P. I. Cooper, «The absorption of radiation in solar stills», Solar Energy, т. 12, с. 333 - 346, 1969.
P. J. Verlinden, Swanson, R. M., и Crane, R. A., «7000 High Efficiency Cells for a Dream», Progress in Photovoltaics: Research and Applications, т. 2, с. 143 - 152, 1994.

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