Biblio

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1
S. Narayanan и др., «18% efficient polycrystalline silicon solar cells», Twenty First IEEE Photovoltaic Specialists Conference, т. 1. с. 678-680, 1990.
7
P. J. Verlinden, Swanson, R. M., и Crane, R. A., «7000 High Efficiency Cells for a Dream», Progress in Photovoltaics: Research and Applications, т. 2, с. 143 - 152, 1994.
A
R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, с. 889-94, 2005.
C
W. D. Eades и Swanson, R. M., «Calculation of surface generation and recombination velocities at the Si-SiO2 interface», Journal of Applied Physics, т. 58, с. 4267, 1985.
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
J. Schmidt, Kerr, M. J., и Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, т. 88, с. 1494-1497, 2000.
D
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, т. 76, с. 2851-2854, 1994.
E
J. Henrie, Kellis, S., Schultz, S., и Hawkins, A., «Electronic color charts for dielectric films on silicon», Optics Express, т. 12, с. 1464–1469, 2004.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
F
J. R. G. Ross и Smokler, M. I., «Flat-Plate Solar Array Project Final Report», с. 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., и Sreenivasan, K. R., «From the Cover: Anomalously weak solar convection», Proceedings of the National Academy of Sciences, т. 109, № 30, с. 11928 - 11932, 2012.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
G
P. J. Cousins и др., «Gen III: Improved Performance at Lower Cost», в 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
I
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
L
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.

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