Biblio

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Author [ Title(Desc)] Type Year
Filters: First Letter Of Last Name is C and Author is Andrés Cuevas  [Clear All Filters]
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C
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
G
M. J. Kerr и Cuevas, A., «General parameterization of Auger recombination in crystalline silicon», Journal of Applied Physics, т. 91, с. 2473-2480, 2002.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
I
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
Q
R. A. Sinton и Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», в 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, с. 1152–1155.
R
«The Recombination Parameter J0», Energy Procedia, т. 55, с. 53 - 62, 2014.
U
D. Macdonald, Sinton, R. A., и Cuevas, A., «On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon», Journal of Applied Physics, т. 89, с. 2772-2778, 2001.