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J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, с. 889-94, 2005.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
M. J. Stocks, Carr, A. J., и Blakers, A. W., «Texturing of polycrystalline silicon», Solar Energy Materials and Solar Cells, т. 40, с. 33 - 42, 1996.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, т. 76, с. 2851-2854, 1994.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
R. A. Sinton и Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», в 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, с. 1152–1155.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
W. Shockley и Read, W. T., «Statistics of the Recombinations of Holes and Electrons», Physical Review, т. 87, с. 835, 1952.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
H. B. Serreze, «Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations», 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, с. 1-8, 1978.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
R. Sekuler и Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
D. Schroder, Semiconductor material and device characterization, 3rd editionй изд. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
J. Schmidt, Kerr, M. J., и Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, т. 88, с. 1494-1497, 2000.