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M. Aven, «High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing», Journal of Applied Physics, т. 42, № 3, с. 1204, 1971.
P. Auger, «Sur les rayons β secondaires produits dans un gaz par des rayons X», C.R.A.S., т. 177, с. 169-171, 1923.
K. K. Anwar, «Aluminium Back Surface Field in Buried Contact Solar Cells», University of New South Wales, 2000.
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
P. P. Altermatt, Schenk, A., Geelhaar, F., и Heiser, G., «Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing», Journal of Applied Physics, т. 93, № 3, с. 1598, 2003.
W. G. Adams и Day, R. E., «The Action of Light on Selenium», Proceedings of the Royal Society, London, т. A25, с. 113, 1877.
A. G. Aberle, Wenham, S. R., и Green, M. A., «A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells», в Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, 1993.