Biblio

Export 162 results:
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
D
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, т. 76, с. 2851-2854, 1994.
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
C. B. Honsberg, Anwar, K. K., Mehrvarz, H. R., Cotter, J. E., и Wenham, S. R., «Dependence of aluminium alloying on solar cell processing conditions», 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes. 2003.
S. J. Robinson, Aberle, A. G., и Green, M. A., «Departures from the principle of superposition in silicon solar cells», Journal of Applied Physics, т. 76, с. 7920, 1994.
S. W. Glunz, Rein, S., Warta, W., Knobloch, J., и Wettling, W., «Degradation of carrier lifetime in Cz silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 219 - 229, 2001.
P. A. Basore, «Defining terms for crystalline silicon solar cells», Progress in Photovoltaics: Research and Applications, т. 2, с. 177-179, 1994.
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
C
J. Schmidt, Kerr, M. J., и Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, т. 88, с. 1494-1497, 2000.
L. O. Grondahl, «The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell», Review of Modern Physics, т. 5, с. 141, 1933.
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
F. Braun, «On Conductance in Metal Sulphides», Ann. d. Physik, т. 153, с. 556, 1874.
M. Blanco-Muriel, Alarcón-Padilla, D. C., López-Moratalla, T., и Lara-Coira, M. Í., «Computing the solar vector», Solar Energy, т. 70, с. 431 - 441, 2001.
J. E. Parrott, «Choice of an equivalent black body solar temperature», Solar Energy, т. 51, с. 195 - 195, 1993.
W. D. Eades и Swanson, R. M., «Calculation of surface generation and recombination velocities at the Si-SiO2 interface», Journal of Applied Physics, т. 58, с. 4267, 1985.
A
S. Durand, «Attaining Thirty-Year Photovoltaic System Lifetime», Progress in Photovoltaics: Research and Applications, 1994.
R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, с. 889-94, 2005.
A. B. Meinel и Meinel, M. P., Applied Solar Energy. Addison Wesley Publishing Co., 1976.
S. R. Wenham, Green, M. A., Watt, M. E., и Corkish, R., «Applied Photovoltaics», с. 317, 2007.
F. A. Lindholm, Fossum, J. G., и Burgess, E. L., «Application of the superposition principle to solar-cell analysis», IEEE Transactions on Electron Devices, т. 26, с. 165–171, 1979.
K. L. Luke и Cheng, L. - J., «Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity», Journal of Applied Physics, т. 61, с. 2282-2293, 1987.
S. P. Bremner, Levy, M. Y., и Honsberg, C. B., «Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method», Progress in Photovoltaics: Research and Applications, т. 16, с. 225–233, 2008.
K. K. Anwar, «Aluminium Back Surface Field in Buried Contact Solar Cells», University of New South Wales, 2000.

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