Biblio

Export 162 results:
[ Author(Desc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
S
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
R. A. Sinton и Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», в 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, с. 1152–1155.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, т. 76, с. 2851-2854, 1994.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
M. J. Stocks, Carr, A. J., и Blakers, A. W., «Texturing of polycrystalline silicon», Solar Energy Materials and Solar Cells, т. 40, с. 33 - 42, 1996.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, с. 889-94, 2005.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
T
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
W. R. Thurber, Mattis,, Liu,, и Filliben, «The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon». U.S. Department of Commerce National Bureau of Standards, 1981.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
V
L. L. Vant-Hull и Hildebrandt, A. F., «Solar thermal power system based on optical transmission», Solar Energy, т. 18, с. 31 - 39, 1976.
P. J. Verlinden, Swanson, R. M., и Crane, R. A., «7000 High Efficiency Cells for a Dream», Progress in Photovoltaics: Research and Applications, т. 2, с. 143 - 152, 1994.
W
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
E. Y. Wang, Yu, F. T. S., Sims, V. L., Brandhorst, E. W., и Broder, J. D., «Optimum Design of Anti-reflection coating for silicon solar cells», 10th IEEE Photovoltaic Specialists Conference. с. 168-171, 1973.
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
S. R. Wenham и Green, M. A., «Buried contact solar cell». 1988.
S. R. Wenham, Green, M. A., Watt, M. E., и Corkish, R., «Applied Photovoltaics», с. 317, 2007.

Pages