Biblio

Export 162 results:
Author [ Title(Asc)] Type Year
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N
W. Keogh и Blakers, A. W., «Natural Sunlight Calibration of Silicon Solar Cells.», 17th European Photovoltaic Solar Energy Conference. Munich, Germany, 2001.
M
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
A. E. Becquerel, «Memoire sur les effects d´electriques produits sous l´influence des rayons solaires», Annalen der Physick und Chemie, т. 54, с. 35-42, 1841.
E. G. Laue, «The measurement of solar spectral irradiance at different terrestrial elevations», Solar Energy, т. 13, с. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
A. S. H. van der Heide и et al, «Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques», 16th European Photovoltaic Solar Energy Conference. Glasgow (United Kingdom), с. 1438, 2000.
L
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
G. Bunea, Wilson, K., Meydbray, Y., Campbell, M., и Ceuster, D. D., «Low Light Performance of Mono-Crystalline Silicon Solar Cells», в 4th World Conference on Photovoltaic Energy Conference, Waikoloa, HI, 2006, с. 1312–1314.
D. De Ceuster, Cousins, P., Rose, D., Cudzinovic, M., и Mulligan, W., «Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells», 22nd European Photovoltaic Specialist Conference. 2007.
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
R. S. Ohl, «Light-Sensitive Electric Device», U.S. Patent, т. 2, с. 402, 602, 1941.
P. Campbell и Green, M. A., «Light trapping properties of pyramidally textured surfaces», Journal of Applied Physics, т. 62, № 1, с. 243, 1987.
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R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.
E. Yablonovich и Cody, G. D., «Intensity Enhancement in Textured Optical Sheets for Solar Cells», IEEE Transactions on Electron Devices, т. ED-29, с. 300-305, 1982.
K. R. McIntosh и Honsberg, C. B., «The Influence of Edge Recombination on a Solar Cell’s IV Curve», 16th European Photovoltaic Solar Energy Conference. 2000.
J. Zhao, A., W., Dai, X., Green, M. A., и Wenham, S. R., «Improvements in Silicon Solar Cell Performance», 22nd IEEE PV Specialists Conference. с. 399-402, 1991.
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.

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