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D. Macdonald, Sinton, R. A., и Cuevas, A., «On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon», Journal of Applied Physics, т. 89, с. 2772-2778, 2001.
M. Mack, «Solar Power for Telecommunications», The Telecommunication Journal of Australia, т. 29, с. 20-44, 1979.
T. Markvart, «Solar Electricity», с. 271, 2000.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
K. R. McIntosh и Baker-Finch, S. C., «OPAL 2: Rapid optical simulation of silicon solar cells», в 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference, Austin, TX, USA, 2012.
K. R. McIntosh и Honsberg, C. B., «The Influence of Edge Recombination on a Solar Cell’s IV Curve», 16th European Photovoltaic Solar Energy Conference. 2000.
A. B. Meinel и Meinel, M. P., Applied Solar Energy. Addison Wesley Publishing Co., 1976.
A. Mette и et al, «Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste», Progress in Photovoltaics: Research and Applications, т. 15, с. 493-505, 2007.
K. Misiakos и Tsamakis, D., «Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K», Journal of Applied Physics, т. 74, № 5, с. 3293, 1993.