Biblio

Export 162 results:
Author Title [ Type(Asc)] Year
Journal Article
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
A. E. Becquerel, «Memoire sur les effects d´electriques produits sous l´influence des rayons solaires», Annalen der Physick und Chemie, т. 54, с. 35-42, 1841.
E. G. Laue, «The measurement of solar spectral irradiance at different terrestrial elevations», Solar Energy, т. 13, с. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
R. S. Ohl, «Light-Sensitive Electric Device», U.S. Patent, т. 2, с. 402, 602, 1941.
P. Campbell и Green, M. A., «Light trapping properties of pyramidally textured surfaces», Journal of Applied Physics, т. 62, № 1, с. 243, 1987.
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.
E. Yablonovich и Cody, G. D., «Intensity Enhancement in Textured Optical Sheets for Solar Cells», IEEE Transactions on Electron Devices, т. ED-29, с. 300-305, 1982.
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
P. Campbell и Green, M. A., «High performance light trapping textures for monocrystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, № 1-4, с. 369 - 375, 2001.
M. Aven, «High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing», Journal of Applied Physics, т. 42, № 3, с. 1204, 1971.
A. Luque и Hegedus, S., «Handbook of Photovoltaic Science and Engineering», с. 1117, 2003.
J. Hansen, «Global temperature change», Proceedings of the National Academy of Sciences, т. 103, с. 14288 - 14293, 2006.
NASA, «GISS Surface Temperature Analysis», 2010.
A. Einstein, «Generation and transformation of light», Annalen der Physik, т. 17, 1905.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
H. Nagel, Berge, C., и Aberle, A. G., «Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors», Journal of Applied Physics, т. 86, с. 6218-6221, 1999.
M. J. Kerr и Cuevas, A., «General parameterization of Auger recombination in crystalline silicon», Journal of Applied Physics, т. 91, с. 2473-2480, 2002.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.

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