Biblio

Export 162 results:
Author [ Title(Desc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
G
H. Nagel, Berge, C., и Aberle, A. G., «Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors», Journal of Applied Physics, т. 86, с. 6218-6221, 1999.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
A. Einstein, «Generation and transformation of light», Annalen der Physik, т. 17, 1905.
NASA, «GISS Surface Temperature Analysis», 2010.
J. Hansen, «Global temperature change», Proceedings of the National Academy of Sciences, т. 103, с. 14288 - 14293, 2006.
H
A. Luque и Hegedus, S., «Handbook of Photovoltaic Science and Engineering», с. 1117, 2003.
B. Dale и Rudenberg, H. G., «High efficiency silicon solar cells», в Proceedings of the 14th Annual Power Sources Conference, 1960, с. 22.
M. Aven, «High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing», Journal of Applied Physics, т. 42, № 3, с. 1204, 1971.
P. Campbell и Green, M. A., «High performance light trapping textures for monocrystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, № 1-4, с. 369 - 375, 2001.
M. Wolf, «Historical Development of Solar Cells». IEEE Press, 1976.
I
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., и Narayanan, S., «Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells», 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
J. Zhao, A., W., Dai, X., Green, M. A., и Wenham, S. R., «Improvements in Silicon Solar Cell Performance», 22nd IEEE PV Specialists Conference. с. 399-402, 1991.
K. R. McIntosh и Honsberg, C. B., «The Influence of Edge Recombination on a Solar Cell’s IV Curve», 16th European Photovoltaic Solar Energy Conference. 2000.
E. Yablonovich и Cody, G. D., «Intensity Enhancement in Textured Optical Sheets for Solar Cells», IEEE Transactions on Electron Devices, т. ED-29, с. 300-305, 1982.
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
L
P. Campbell и Green, M. A., «Light trapping properties of pyramidally textured surfaces», Journal of Applied Physics, т. 62, № 1, с. 243, 1987.
R. S. Ohl, «Light-Sensitive Electric Device», U.S. Patent, т. 2, с. 402, 602, 1941.
T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
D. De Ceuster, Cousins, P., Rose, D., Cudzinovic, M., и Mulligan, W., «Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells», 22nd European Photovoltaic Specialist Conference. 2007.

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