Biblio

Export 162 results:
Author Title [ Type(Asc)] Year
Journal Article
F. Kasten и Young, A. T., «Revised optical air mass tables and approximation formula», Applied Optics, т. 28, с. 4735–4738, 1989.
D. PYSCH, Mette, A., и Glunz, S. W., «A review and comparison of different methods to determine the series resistance of solar cells», Solar Energy Materials and Solar Cells, т. 91, с. 1698 - 1706, 2007.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
A. E. Becquerel, «Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques», Comptes Rendus de L´Academie des Sciences, т. 9, с. 145-149, 1839.
R. Hezel, «Recent progress in MIS solar cells», Progress in Photovoltaics: Research and Applications, т. 5, с. 109-120, 1997.
P. P. Altermatt, Schenk, A., Geelhaar, F., и Heiser, G., «Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing», Journal of Applied Physics, т. 93, № 3, с. 1598, 2003.
M. Y. Levy и Honsberg, C. B., «Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications», Solid-State Electronics, т. 50, с. 1400-1405, 2006.
R. Chandramohan, Sanjeeviraja, C., и Mahalingam, T., «Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications», physica status solidi (a), т. 163, № 2, с. R11 - R12, 1997.
P. Würfel, «Physics of Solar Cells», с. 183, 2009.
J. Nelson, «The Physics of Solar Cells», с. 355, 2003.
J. G. Fossum, «Physical operation of back-surface-field silicon solar cells», IEEE Transactions on Electron Devices, т. 24, с. 322 - 325, 1977.
A. Goetzberger и Hoffmann, V. U., «Photovoltaic Solar Energy Generation», с. 232, 2005.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., и Uraoka, Y., «Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence», Applied Physics Letters, т. 86, с. 262108, 2005.
E. F. Kingsbury и Ohl, R. S., «Photoelectric Properties of Tonically Bombarded Silicon», Bell Systems Technical Journal, т. 31, с. 802-815, 1952.
S. M. Hu, Fahey, P., и Sutton, P., «On Phosphorus Diffusion in Silicon», On Phosphorus Diffusion in Silicon, т. 54, с. 6912-6922, 1983.
M. A. Green, «The path to 25% silicon solar cell efficiency: History of silicon cell evolution», Progress in Photovoltaics: Research and Applications, т. 17, с. 183-189, 2009.
M. A. Green и Keevers, M. J., «Optical properties of intrinsic silicon at 300 K», Progress in Photovoltaics: Research and Applications, т. 3, с. 189 - 192, 1995.
P. A. Basore, «Numerical modeling of textured silicon solar cells using PC-1D», Electron Devices, IEEE Transactions on, т. 37, с. 337 -343, 1990.
W. A. Pliskin и Conrad, E. E., «Nondestructive determination of thickness and refractive index of transparent films», IBM Journal of Research Devices, т. 8, с. 43–51, 1964.
D. M. Chapin, Fuller, C. S., и Pearson, G. L., «A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power», Journal of Applied Physics, т. 25, с. 676-677, 1954.
C. E. Fritts, «On a New Form of Selenium Photocell», American J. of Science, т. 26, с. 465, 1883.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.

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