Biblio

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J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.
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F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
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H. B. Serreze, «Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations», 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, с. 1-8, 1978.
E. Y. Wang, Yu, F. T. S., Sims, V. L., Brandhorst, E. W., и Broder, J. D., «Optimum Design of Anti-reflection coating for silicon solar cells», 10th IEEE Photovoltaic Specialists Conference. с. 168-171, 1973.
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R. Sekuler и Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
S. M. Hu, Fahey, P., и Sutton, P., «On Phosphorus Diffusion in Silicon», On Phosphorus Diffusion in Silicon, т. 54, с. 6912-6922, 1983.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
R. Chandramohan, Sanjeeviraja, C., и Mahalingam, T., «Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications», physica status solidi (a), т. 163, № 2, с. R11 - R12, 1997.
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R. A. Sinton и Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», в 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, с. 1152–1155.
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P. P. Altermatt, Schenk, A., Geelhaar, F., и Heiser, G., «Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing», Journal of Applied Physics, т. 93, № 3, с. 1598, 2003.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
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J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
D. Schroder, Semiconductor material and device characterization, 3rd editionй изд. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
J. Horzel, Szlufcik, J., Nijs, J., и Mertens, R., «A simple processing sequence for selective emitters», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 139-142, 1997.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.

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