Biblio

Export 21 results:
[ Author(Desc)] Title Type Year
Filters: First Letter Of Last Name is S  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
S
J. Schmidt, Kerr, M. J., и Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, т. 88, с. 1494-1497, 2000.
D. Schroder, Semiconductor material and device characterization, 3rd editionй изд. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
R. Sekuler и Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
H. B. Serreze, «Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations», 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, с. 1-8, 1978.
J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
W. Shockley и Read, W. T., «Statistics of the Recombinations of Holes and Electrons», Physical Review, т. 87, с. 835, 1952.
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
R. A. Sinton и Swanson, R. M., «Recombination in highly injected silicon», Electron Devices, IEEE Transactions on, т. 34, с. 1380 - 1389, 1987.
R. A. Sinton и Cuevas, A., «A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization», в 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, с. 1152–1155.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, т. 76, с. 2851-2854, 1994.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
M. J. Stocks, Carr, A. J., и Blakers, A. W., «Texturing of polycrystalline silicon», Solar Energy Materials and Solar Cells, т. 40, с. 33 - 42, 1996.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
R. M. Swanson, «Approaching the 29% limit efficiency of silicon solar cells», Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, с. 889-94, 2005.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., и Van-Overstraeten, R., «Low-cost industrial technologies of crystalline silicon solar cells», Proceedings-of-the-IEEE, т. 85. с. 711-730, 1997.