Biblio

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M
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
F. Dimroth и др., «METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY», 34th IEEE Photovoltaic Specialists Conference. 2009.
A. E. Becquerel, «Memoire sur les effects d´electriques produits sous l´influence des rayons solaires», Annalen der Physick und Chemie, т. 54, с. 35-42, 1841.
E. G. Laue, «The measurement of solar spectral irradiance at different terrestrial elevations», Solar Energy, т. 13, с. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
A. S. H. van der Heide и et al, «Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques», 16th European Photovoltaic Solar Energy Conference. Glasgow (United Kingdom), с. 1438, 2000.