Biblio

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1977
H. C. Card и Yang, E. S., «Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination», IEEE Transactions on Electron Devices, т. ED-24, с. 397-402, 1977.
J. G. Fossum, «Physical operation of back-surface-field silicon solar cells», IEEE Transactions on Electron Devices, т. 24, с. 322 - 325, 1977.
1976
A. B. Meinel и Meinel, M. P., Applied Solar Energy. Addison Wesley Publishing Co., 1976.
M. Wolf, «Historical Development of Solar Cells». IEEE Press, 1976.
C. E. Backus, Solar Cells. New York: IEEE, 1976, с. 512.
L. L. Vant-Hull и Hildebrandt, A. F., «Solar thermal power system based on optical transmission», Solar Energy, т. 18, с. 31 - 39, 1976.
1973
E. Y. Wang, Yu, F. T. S., Sims, V. L., Brandhorst, E. W., и Broder, J. D., «Optimum Design of Anti-reflection coating for silicon solar cells», 10th IEEE Photovoltaic Specialists Conference. с. 168-171, 1973.
1971
M. Aven, «High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing», Journal of Applied Physics, т. 42, № 3, с. 1204, 1971.
1970
E. G. Laue, «The measurement of solar spectral irradiance at different terrestrial elevations», Solar Energy, т. 13, с. 43 - 50, IN1-IN4, 51-57, 1970.
1969
P. I. Cooper, «The absorption of radiation in solar stills», Solar Energy, т. 12, с. 333 - 346, 1969.
1964
W. A. Pliskin и Conrad, E. E., «Nondestructive determination of thickness and refractive index of transparent films», IBM Journal of Research Devices, т. 8, с. 43–51, 1964.
1963
M. Wolf и Rauschenbach, H., «Series Resistance Effects on Solar Cell Measurements», Advanced Energy Conversion, т. 3, 1963.
1961
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
1960
B. Dale и Rudenberg, H. G., «High efficiency silicon solar cells», в Proceedings of the 14th Annual Power Sources Conference, 1960, с. 22.
1959
J. N. Shive, «Semiconductor Devices, Chapter 8», New Jersey: Van Nostrand, 1959.
1958
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
1954
D. M. Chapin, Fuller, C. S., и Pearson, G. L., «A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power», Journal of Applied Physics, т. 25, с. 676-677, 1954.
1952
R. N. Hall, «Electron-Hole Recombination in Germanium», Phys. Rev., т. 87, с. 387, 1952.
E. F. Kingsbury и Ohl, R. S., «Photoelectric Properties of Tonically Bombarded Silicon», Bell Systems Technical Journal, т. 31, с. 802-815, 1952.
W. Shockley и Read, W. T., «Statistics of the Recombinations of Holes and Electrons», Physical Review, т. 87, с. 835, 1952.
W. G. Pfann, «Zone-refining», Trans. AIME, т. 194, 1952.
1950
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
1941
R. S. Ohl, «Light-Sensitive Electric Device», U.S. Patent, т. 2, с. 402, 602, 1941.
1939
F. C. Nix и Treptwo, A. W., «A Thallous Sulphide Photo EMF Cell», Journal Opt. Society of America, т. 29, с. 457, 1939.
1934
G. Bauer, «Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen», Annalen der Physik, т. 411, № 4, с. 434 - 464, 1934.

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