Biblio

Export 162 results:
Author Title Type [ Year(Asc)]
Filters: Filter is   [Clear All Filters]
1994
S. K. Ghandhi, {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition, 2й изд. Wiley-Interscience, 1994.
1993
K. Misiakos и Tsamakis, D., «Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K», Journal of Applied Physics, т. 74, № 5, с. 3293, 1993.
J. E. Parrott, «Choice of an equivalent black body solar temperature», Solar Energy, т. 51, с. 195 - 195, 1993.
A. G. Aberle, Wenham, S. R., и Green, M. A., «A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells», в Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, 1993.
1992
G. Willeke, Nussbaumer, H., Bender, H., и Bucher, E., «A simple and effective light trapping technique for polycrystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 26, с. 345 - 356, 1992.
M. A. Green, Solar Cells - Operating Principles, Technology and System Application. Kensington, Australia: University of NSW, 1992.
1991
J. H. Wohlgemuth и Narayanan, S., «Buried contact concentrator solar cells», Twenty Second IEEE Photovoltaic Specialists Conference, т. 1. с. 273-277, 1991.
H. J. Wenger, Schaefer, J., Rosenthal, A., Hammond, B., и Schlueter, L., «Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates», 22nd IEEE Photovoltaic Specialists Conference. Las Vegas, USA, с. 586-592, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
J. Zhao, A., W., Dai, X., Green, M. A., и Wenham, S. R., «Improvements in Silicon Solar Cell Performance», 22nd IEEE PV Specialists Conference. с. 399-402, 1991.
A. W. Blakers, Green, M. A., Leo, T., Outhred, H., и Robins, B., The Role of Photovoltaics in Reducing Greenhouse Gas Emissions. Canberra: Australian Government Publishing Service, 1991.
D. King и Hansen, B., «A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources», 22nd IEEE PV Specialists Conference. 1991.
1990
S. Narayanan и др., «18% efficient polycrystalline silicon solar cells», Twenty First IEEE Photovoltaic Specialists Conference, т. 1. с. 678-680, 1990.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
P. A. Basore, «Numerical modeling of textured silicon solar cells using PC-1D», Electron Devices, IEEE Transactions on, т. 37, с. 337 -343, 1990.
M. A. Green, «Photovoltaics: Coming of Age», 21st IEEE Photovoltaic Specialists Conference. Orlando, USA, с. 1-8, 1990.
1989
J. C. Zolper, Narayanan, S., Wenham, S. R., и Green, M. A., «16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell», Applied Physics Letters, т. 55, с. 2363, 1989.
F. Kasten и Young, A. T., «Revised optical air mass tables and approximation formula», Applied Optics, т. 28, с. 4735–4738, 1989.
1988
S. R. Wenham и Green, M. A., «Buried contact solar cell». 1988.
K. Emery, Myers, D., и Rummel, S., «SOLAR SIMULATION - PROBLEMS AND SOLUTIONS», 20th IEEE PV Specialists Conference. с. 1087, 1988.
1987
K. L. Luke и Cheng, L. - J., «Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity», Journal of Applied Physics, т. 61, с. 2282-2293, 1987.

Pages