Biblio

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1990
S. Narayanan и др., «18% efficient polycrystalline silicon solar cells», Twenty First IEEE Photovoltaic Specialists Conference, т. 1. с. 678-680, 1990.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
C. H. Wang, Misiakos, K., и Neugroschel, A., «Minority-carrier transport parameters in n-type silicon», IEEE Transactions on Electron Devices, т. 37, с. 1314 - 1322, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
P. A. Basore, «Numerical modeling of textured silicon solar cells using PC-1D», Electron Devices, IEEE Transactions on, т. 37, с. 337 -343, 1990.
M. A. Green, «Photovoltaics: Coming of Age», 21st IEEE Photovoltaic Specialists Conference. Orlando, USA, с. 1-8, 1990.
1991
J. H. Wohlgemuth и Narayanan, S., «Buried contact concentrator solar cells», Twenty Second IEEE Photovoltaic Specialists Conference, т. 1. с. 273-277, 1991.

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