%0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2008 %T Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method %A S. P. Bremner %A M. Y. Levy %A Christiana B Honsberg %X

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.

%B Progress in Photovoltaics: Research and Applications %V 16 %P 225–233 %G eng %U http://dx.doi.org/10.1002/pip.799 %R 10.1002/pip.799 %0 Journal Article %D 2007 %T Applied Photovoltaics %A Wenham, S.R. %A Martin A Green %A Watt, M. E. %A R. Corkish %X
%I Earthscan %C London, UK %P 317 %@ 1-84407-401-3 %G eng %U http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 %0 Conference Proceedings %B Thirty-First IEEE Photovoltaic Specialists Conference %D 2005 %T Approaching the 29% limit efficiency of silicon solar cells %A Richard M Swanson %B Thirty-First IEEE Photovoltaic Specialists Conference %I 01/2005 %C Lake buena Vista, FL, USA %P 889-94 %G eng %0 Thesis %D 2000 %T Aluminium Back Surface Field in Buried Contact Solar Cells %A Anwar, K.K. %I University of New South Wales %V Bachelor of Engineering %G eng %9 masters %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T Attaining Thirty-Year Photovoltaic System Lifetime %A Durand, S. %B Progress in Photovoltaics: Research and Applications %G eng %0 Journal Article %J Journal of Applied Physics %D 1993 %T Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K %A Misiakos, Konstantinos %A Tsamakis, Dimitris %X The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. %B Journal of Applied Physics %V 74 %P 3293 %8 Jan-01-1993 %G eng %N 5 %! J. Appl. Phys. %R 10.1063/1.354551 %0 Journal Article %J Journal of Applied Physics %D 1987 %T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity %A Keung L. Luke %A Li-Jen Cheng %K carrier lifetime %K LASERRADIATION HEATING %K MINORITY CARRIERS %K RECOMBINATION %K SILICON %K SILICON SOLAR CELLS %K SURFACE PROPERTIES %K THEORETICAL DATA %K VELOCITY %K WAFERS %B Journal of Applied Physics %I AIP %V 61 %P 2282-2293 %G eng %U http://link.aip.org/link/?JAP/61/2282/1 %R 10.1063/1.337938 %0 Journal Article %J Solar Cells %D 1982 %T Accuracy of Analytical Expressions for Solar Cell Fill Factors %A Martin A Green %B Solar Cells %V 7 %P 337-340 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1979 %T Application of the superposition principle to solar-cell analysis %A F.A. Lindholm %A Fossum, J.G. %A E.L. Burgess %X The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). %B IEEE Transactions on Electron Devices %V 26 %P 165–171 %G eng %0 Book %D 1976 %T Applied Solar Energy %A Meinel, A.B. %A Meinel, M.P. %I Addison Wesley Publishing Co. %G eng %0 Journal Article %J Solar Energy %D 1969 %T The absorption of radiation in solar stills %A P.I. Cooper %B Solar Energy %V 12 %P 333 - 346 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 %R DOI: 10.1016/0038-092X(69)90047-4 %0 Journal Article %J Annalen der Physik %D 1934 %T Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen %A Bauer, Gerhard %B Annalen der Physik %V 411 %P 434 - 464 %8 Jan-01-1934 %G eng %N 4 %! Ann. Phys. %R 10.1002/(ISSN)1521-388910.1002/andp.v411:410.1002/andp.19344110405 %0 Journal Article %J Proceedings of the Royal Society, London %D 1877 %T The Action of Light on Selenium %A Adams, W.G. %A Day, R.E. %B Proceedings of the Royal Society, London %V A25 %P 113 %G eng