TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K JF - Journal of Applied Physics Y1 - 1991 A1 - A. B. Sproul A1 - Martin A Green KW - CARRIER DENSITY KW - IV CHARACTERISTIC KW - JUNCTION DIODES KW - MEDIUM TEMPERATURE KW - MINORITY CARRIERS KW - SANDIA LABORATORIES KW - SILICON KW - SILICON DIODES KW - TEMPERATURE DEPENDENCE PB - AIP VL - 70 UR - http://link.aip.org/link/?JAP/70/846/1 N1 -
KW - Sproul1991 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K JF - Journal of Applied Physics Y1 - 1991 A1 - A. B. Sproul A1 - Martin A Green VL - 70 N1 -
KW - Sproul1991 ER - TY - JOUR T1 - Improved value for the silicon intrinsic carrier concentration at 300 K JF - Applied Physics Letters Y1 - 1990 A1 - A. B. Sproul A1 - Martin A Green A1 - Zhao, J. VL - 57 N1 -
KW - Sproul1990 ER -