TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
KW - CARRIER DENSITY
KW - IV CHARACTERISTIC
KW - JUNCTION DIODES
KW - MEDIUM TEMPERATURE
KW - MINORITY CARRIERS
KW - SANDIA LABORATORIES
KW - SILICON
KW - SILICON DIODES
KW - TEMPERATURE DEPENDENCE
PB - AIP
VL - 70
UR - http://link.aip.org/link/?JAP/70/846/1
N1 -
KW - Sproul1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
VL - 70
N1 -
KW - Sproul1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration at 300 K
JF - Applied Physics Letters
Y1 - 1990
A1 - A. B. Sproul
A1 - Martin A Green
A1 - Zhao, J.
VL - 57
N1 -
KW - Sproul1990
ER -