TY - JOUR T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing JF - Journal of Applied Physics Y1 - 2003 A1 - Pietro P Altermatt A1 - Schenk, Andreas A1 - Geelhaar, Frank A1 - Heiser, Gernot AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved. VL - 93 CP - 3 J1 - J. Appl. Phys. KW - Altermatt2003 ER - TY - JOUR T1 - Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling JF - Solar Energy Materials and Solar Cells Y1 - 2002 VL - 71 UR - http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain CP - 2 J1 - Solar Energy Materials and Solar Cells KW - altermatt2002 ER - TY - JOUR T1 - Improvements in numerical modelling of highly injected crystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Pietro P Altermatt A1 - Sinton, R.A. A1 - G. Heiser AB -

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

VL - 65 UR - http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1 KW - Altermatt2001 ER - TY - JOUR T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities JF - Journal of Applied Physics Y1 - 2000 A1 - Jan Schmidt A1 - Mark J Kerr A1 - Pietro P Altermatt KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - photoconductivity KW - SILICON PB - AIP VL - 88 UR - http://link.aip.org/link/?JAP/88/1494/1 KW - Schmidt2000 ER - TY - Generic T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - 16h European Solar Energy Conference N1 -
KW - Corkish2000 ER - TY - CONF T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - Proceedings of the 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - Proceedings of the 16h European Solar Energy Conference PB - James and James CY - Glasgow UK SN - 9781902916187 N1 -
KW - Corkish2000 ER -