TY - JOUR T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics JF - IEEE Journal of Photovoltaics Y1 - 2012 A1 - Baker-Finch, Simeon C. A1 - McIntosh, Keith R. A1 - Terry, Mason L. VL - 2 CP - 4 J1 - IEEE J. Photovoltaics KW - 533 ER - TY - CONF T1 - OPAL 2: Rapid optical simulation of silicon solar cells T2 - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference Y1 - 2012 A1 - McIntosh, Keith R. A1 - Baker-Finch, Simeon C. AB - The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle. JA - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Austin, TX, USA SN - 978-1-4673-0064-3 KW - 532 ER - TY - CONF T1 - Gen III: Improved Performance at Lower Cost T2 - 35th IEEE Photovoltaic Specialists Conference Y1 - 2010 A1 - Peter J. Cousins A1 - David D. Smith A1 - Hsin-Chiao Luan A1 - Jane Manning A1 - Tim D. Dennis A1 - Ann Waldhaue A1 - Karen E. Wilson A1 - Gabriel Harley A1 - William P. Mulligan JA - 35th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Honolulu, Hawaii N1 -
KW - Cousins2010 ER - TY - Generic T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells T2 - 22nd European Photovoltaic Specialist Conference Y1 - 2007 A1 - De Ceuster, D. A1 - P. Cousins A1 - D. Rose A1 - M. Cudzinovic A1 - W. Mulligan JA - 22nd European Photovoltaic Specialist Conference N1 -
KW - DeCeuster2007 ER - TY - JOUR T1 - A review and comparison of different methods to determine the series resistance of solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2007 A1 - PYSCH, D A1 - A. Mette A1 - Stefan W. Glunz VL - 91 N1 -
KW - Pysch2007 ER - TY - JOUR T1 - Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste JF - Progress in Photovoltaics: Research and Applications Y1 - 2007 A1 - A. Mette A1 - et al VL - 15 N1 -
KW - Mette2007 ER - TY - CONF T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells T2 - 4th World Conference on Photovoltaic Energy Conference Y1 - 2006 A1 - Gabriela Bunea A1 - Karen Wilson A1 - Yevgeny Meydbray A1 - Matthew Campbell A1 - Denis De Ceuster JA - 4th World Conference on Photovoltaic Energy Conference CY - Waikoloa, HI UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 KW - bunea_low_2006 ER - TY - Generic T1 - Dependence of aluminium alloying on solar cell processing conditions T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes Y1 - 2003 A1 - Christiana B Honsberg A1 - Anwar, K.K. A1 - Mehrvarz, H.R. A1 - Cotter, J.E. A1 - Wenham, S.R. JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes N1 -
KW - Honsberg2003 ER - TY - JOUR T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon JF - Journal of Applied Physics Y1 - 2001 A1 - Daniel Macdonald A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - CARRIER DENSITY KW - carrier lifetime KW - electron traps KW - electron-hole recombination KW - elemental semiconductors KW - hole traps KW - photoconductivity KW - SILICON KW - solar cells PB - AIP VL - 89 UR - http://link.aip.org/link/?JAP/89/2772/1 KW - Macdonald2001 ER - TY - Generic T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - McIntosh, K. R. A1 - Christiana B Honsberg JA - 16th European Photovoltaic Solar Energy Conference N1 -
KW - McIntosh2000 ER - TY - Generic T1 - Outdoor measurement of 28% efficiency for a mini-concentrator module T2 - National Center for Photovoltaics Program Review Meeting Y1 - 2000 A1 - O’Neil, M.J. A1 - McDanal, A.J. JA - National Center for Photovoltaics Program Review Meeting CY - Denver, USA N1 -
KW - ONeil2000 ER - TY - JOUR T1 - Solar Electricity Y1 - 2000 A1 - Tomas Markvart PB - John Wiley & Sons CY - Chichester, England SN - 0-471-98853-7 UR - http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1 N1 -

1. Electricity from the Sun

2. Solar Radiation

3. Solar Cells

4. Photovoltaic System Engineering

5. Applications

6. Environmental Impacts of Photovoltaics

7. Advanced and Special Topics

Index

KW - Markvart2000 ER - TY - Generic T1 - Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Einhaus, R. A1 - Vazsonyi, E. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Einhaus1997 ER - TY - Generic T1 - Low-cost industrial technologies of crystalline silicon solar cells T2 - Proceedings-of-the-IEEE Y1 - 1997 A1 - Szlufcik, J. A1 - Sivoththaman, S. A1 - Nlis, J.F. A1 - Mertens, R.P. A1 - Van-Overstraeten, R. JA - Proceedings-of-the-IEEE VL - 85 N1 -
KW - Szlufcik1997 ER - TY - JOUR T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications JF - physica status solidi (a) Y1 - 1997 A1 - Chandramohan, R. A1 - Sanjeeviraja, C. A1 - Mahalingam, T. VL - 163 CP - 2 J1 - phys. stat. sol. (a) KW - Chandramohan1997 ER - TY - Generic T1 - A simple processing sequence for selective emitters T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Horzel, J. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Horzel1997 ER - TY - JOUR T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K JF - Journal of Applied Physics Y1 - 1993 A1 - Misiakos, Konstantinos A1 - Tsamakis, Dimitris AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. VL - 74 CP - 5 J1 - J. Appl. Phys. KW - Misiakos93 ER - TY - JOUR T1 - Minority-carrier transport parameters in n-type silicon JF - IEEE Transactions on Electron Devices Y1 - 1990 A1 - Wang, C.H. A1 - Misiakos, K. A1 - Neugroschel, A. VL - 37 N1 -
KW - Wang1990 ER - TY - JOUR T1 - Modeling daylight availability and irradiance components from direct and global irradiance JF - Solar Energy Y1 - 1990 A1 - Richard Perez A1 - Pierre Ineichen A1 - Robert Seals A1 - Joseph Michalsky A1 - Ronald Stewart AB -

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -
KW - Perez1990 ER - TY - JOUR T1 - Modeling daylight availability and irradiance components from direct and global irradiance JF - Solar Energy Y1 - 1990 A1 - Richard Perez A1 - Pierre Ineichen A1 - Robert Seals A1 - Joseph Michalsky A1 - Ronald Stewart VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -
KW - Perez1990 ER - TY - Generic T1 - SOLAR SIMULATION - PROBLEMS AND SOLUTIONS T2 - 20th IEEE PV Specialists Conference Y1 - 1988 A1 - Emery, K. A1 - Myers, D. A1 - Rummel, S. JA - 20th IEEE PV Specialists Conference N1 -
KW - Emery1988 ER - TY - JOUR T1 - Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon JF - IEEE Transactions on Electron Devices Y1 - 1983 A1 - G. Masetti A1 - M. Severi A1 - S. Solmi KW - arsenic KW - boron KW - CARRIER DENSITY KW - carrier mobility KW - digital simulation KW - elemental semiconductors KW - heavily doped semiconductors KW - phosphorus KW - SILICON AB -

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

VL - ED-30 N1 -

Copyright 1983, {IEE}

KW - Masetti1983 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - JOUR T1 - Solar Power for Telecommunications JF - The Telecommunication Journal of Australia Y1 - 1979 A1 - Mack, M. VL - 29 N1 -
KW - Mack1979 ER - TY - BOOK T1 - Applied Solar Energy Y1 - 1976 A1 - Meinel, A.B. A1 - Meinel, M.P. PB - Addison Wesley Publishing Co. N1 -
KW - Meinel1976 ER -