TY - JOUR
T1 - Improved quantitative description of Auger recombination in crystalline silicon
JF - Physical Review B
Y1 - 2012
A1 - Richter, Armin
A1 - Stefan W. Glunz
A1 - Werner, Florian
A1 - Jan Schmidt
A1 - Andrés Cuevas
AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.
VL - 86
CP - 16
J1 - Phys. Rev. B
KW - Richter2012
ER -
TY - JOUR
T1 - Solar cell efficiency tables (version 35)
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2010
A1 - Martin A Green
A1 - Keith Emery
A1 - Yoshihiro Hishikawa
A1 - Wilhelm Warta
KW - Conversion efficiency
KW - Energy conversion
KW - solar cells
KW - Solar energy
KW - Solar power generation
AB -
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
VL - 18
UR - http://dx.doi.org/10.1002/pip.974
N1 - Compendex
KW - Green2010
ER -
TY - Generic
T1 - METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY
T2 - 34th IEEE Photovoltaic Specialists Conference
Y1 - 2009
A1 - F. Dimroth
A1 - W. Guter
A1 - J. Schöne
A1 - E. Welser
A1 - M. Steiner
A1 - E. Oliva
A1 - A. Wekkeli
A1 - G. Siefer
A1 - S.P. Philipps
A1 - A.W. Bett
JA - 34th IEEE Photovoltaic Specialists Conference
N1 -
KW - Dimroth2009
ER -
TY - JOUR
T1 - The path to 25% silicon solar cell efficiency: History of silicon cell evolution
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2009
A1 - Martin A Green
VL - 17
N1 -
KW - Green2009
ER -
TY - JOUR
T1 - Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients
JF - Solar Energy Materials and Solar Cells
Y1 - 2008
A1 - Martin A Green
KW - Absorption coefficient
KW - optical properties
KW - SILICON SOLAR CELLS
AB - An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.
VL - 92
UR - http://www.sciencedirect.com/science/article/pii/S0927024808002158
KW - green_self-consistent_2008
ER -
TY - JOUR
T1 - Applied Photovoltaics
Y1 - 2007
A1 - Wenham, S.R.
A1 - Martin A Green
A1 - Watt, M. E.
A1 - R. Corkish
AB -
PB - Earthscan
CY - London, UK
SN - 1-84407-401-3
UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1
N1 - Introduction
1. The Characteristics of Sunlight
2. Semiconductors and P-N Junctions
3. The Behavior of Solar Cells
4. Cell Properties and Design
5. PV Cell Interconnection and Module Fabrication
6. Stand-Alone Photovoltaic System Components
7. Designing Stand-Alone Photovoltaic Systems
8. Specific Purpose Photovoltaic Applications
9. Remote Area Power Supply Systems
10. Grid-Connected Photovoltaic Systems
11. Photovoltaic Water Pumping System Components
12. PV Water Pumping System Design
Appendicies
Index
KW - Wenham2007
ER -
TY - JOUR
T1 - A review and comparison of different methods to determine the series resistance of solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2007
A1 - PYSCH, D
A1 - A. Mette
A1 - Stefan W. Glunz
VL - 91
N1 -
KW - Pysch2007
ER -
TY - JOUR
T1 - Photovoltaic Solar Energy Generation
Y1 - 2005
A1 - Adolf Goetzberger
A1 - Volker Uwe Hoffmann
PB - Springer
CY - Berlin, Germany
SN - 3-540-23676-7
UR - http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books&ie=UTF8&qid=1279649098&sr=1-2
N1 - 1. What is Photovoltaics?
2. Physics of Solar Cells
3. Silicon Solar Cell Material and Technology
4. Crystalline Thin-Film Silicon
5. Other Materials, New Concepts
6. Solar Cells and Solar Modules
7. PV Systems
8. PV Systems Installation Possibilities
9. Environmental Impacts by PV Systems
10. Efficinecy and Performance of PV Systems
11. PV Markets Support Measures and Costs
12. The Future PV
13. Other (Perhaps Competing) CO2-Free Energy Sources
14. Popular Killing Arguments Against PV
References
Index
KW - Goetzberger2005
ER -
TY - JOUR
T1 - Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
JF - Journal of Applied Physics
Y1 - 2003
A1 - Pietro P Altermatt
A1 - Schenk, Andreas
A1 - Geelhaar, Frank
A1 - Heiser, Gernot
AB - The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00×1010 cm−3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm−3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65×109 cm−3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.
VL - 93
CP - 3
J1 - J. Appl. Phys.
KW - Altermatt2003
ER -
TY - JOUR
T1 - 24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Zhao, J.
A1 - Aihua Wang
A1 - Martin A Green
VL - 66
N1 -
KW - Zhao2001
ER -
TY - JOUR
T1 - Degradation of carrier lifetime in Cz silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Stefan W. Glunz
A1 - S. Rein
A1 - W. Warta
A1 - J. Knobloch
A1 - W. Wettling
KW - Defects
VL - 65
UR - http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f
N1 -
KW - Glunz2001
ER -
TY - JOUR
T1 - High performance light trapping textures for monocrystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Campbell, Patrick
A1 - Martin A Green
AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.
VL - 65
CP - 1-4
J1 - Solar Energy Materials and Solar Cells
KW - Campbell2001
ER -
TY - Generic
T1 - 19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface
T2 - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
Y1 - 1998
A1 - Zhao, J.
A1 - Wang, A.
A1 - Martin A Green
JA - 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion
CY - Vienna, Austria
N1 -
KW - Zhao1998
ER -
TY - JOUR
T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells
JF - Applied Physics Letters
Y1 - 1998
A1 - Jianhua Zhao
A1 - Aihua Wang
A1 - Martin A Green
A1 - Francesca Ferrazza
KW - elemental semiconductors
KW - SILICON
KW - solar cells
KW - surface texture
PB - AIP
VL - 73
UR - http://link.aip.org/link/?APL/73/1991/1
KW - Zhao1991
ER -
TY - JOUR
T1 - 20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1997
A1 - Zhao, J.
A1 - Wang, A.
A1 - Yun, F.
A1 - Zhang, G.
A1 - Roche, D.M.
A1 - Wenham, S.R.
A1 - Martin A Green
VL - 5
N1 -
KW - Zhao1997
ER -
TY - JOUR
T1 - Optical properties of intrinsic silicon at 300 K
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1995
A1 - Martin A Green
A1 - Keevers, Mark J.
VL - 3
N1 -
KW - Green1995
ER -
TY - JOUR
T1 - Departures from the principle of superposition in silicon solar cells
JF - Journal of Applied Physics
Y1 - 1994
A1 - Robinson, S. J.
A1 - Armin G Aberle
A1 - Martin A Green
VL - 76
N1 -
KW - Robinson1994
ER -
TY - BOOK
T1 - {VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
Y1 - 1994
A1 - Ghandhi, Sorab K.
PB - Wiley-Interscience
SN - 0471580058
KW - Ghandi1994
ER -
TY - CONF
T1 - A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells
T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
Y1 - 1993
A1 - Armin G Aberle
A1 - Wenham, S.R.
A1 - Martin A Green
JA - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
CY - Louisville, KY
KW - Aberle1993
ER -
TY - BOOK
T1 - Solar Cells - Operating Principles, Technology and System Application
Y1 - 1992
A1 - Martin A Green
PB - University of NSW
CY - Kensington, Australia
N1 -
KW - Green1992
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
KW - CARRIER DENSITY
KW - IV CHARACTERISTIC
KW - JUNCTION DIODES
KW - MEDIUM TEMPERATURE
KW - MINORITY CARRIERS
KW - SANDIA LABORATORIES
KW - SILICON
KW - SILICON DIODES
KW - TEMPERATURE DEPENDENCE
PB - AIP
VL - 70
UR - http://link.aip.org/link/?JAP/70/846/1
N1 -
KW - Sproul1991
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
JF - Journal of Applied Physics
Y1 - 1991
A1 - A. B. Sproul
A1 - Martin A Green
VL - 70
N1 -
KW - Sproul1991
ER -
TY - Generic
T1 - Improvements in Silicon Solar Cell Performance
T2 - 22nd IEEE PV Specialists Conference
Y1 - 1991
A1 - Zhao, J.
A1 - Wang A.
A1 - Dai, X.
A1 - Martin A Green
A1 - Wenham, S.R.
JA - 22nd IEEE PV Specialists Conference
N1 -
KW - Zhao1991
ER -
TY - BOOK
T1 - The Role of Photovoltaics in Reducing Greenhouse Gas Emissions
Y1 - 1991
A1 - Andrew W Blakers
A1 - Martin A Green
A1 - T. Leo
A1 - H. Outhred
A1 - B. Robins
PB - Australian Government Publishing Service
CY - Canberra
N1 -
KW - Blakers1991
ER -
TY - Generic
T1 - 18% efficient polycrystalline silicon solar cells
T2 - Twenty First IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Narayanan, S.
A1 - Zolper, J.
A1 - Yun, F.
A1 - Wenham, S.R.
A1 - A. B. Sproul
A1 - Chong,C.M.
A1 - Martin A Green
JA - Twenty First IEEE Photovoltaic Specialists Conference
VL - 1
N1 -
KW - Narayanan1990
ER -
TY - JOUR
T1 - Improved value for the silicon intrinsic carrier concentration at 300 K
JF - Applied Physics Letters
Y1 - 1990
A1 - A. B. Sproul
A1 - Martin A Green
A1 - Zhao, J.
VL - 57
N1 -
KW - Sproul1990
ER -
TY - Generic
T1 - Photovoltaics: Coming of Age
T2 - 21st IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Martin A Green
AB - The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.
JA - 21st IEEE Photovoltaic Specialists Conference
CY - Orlando, USA
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582
N1 -
KW - Green1990
ER -
TY - JOUR
T1 - 16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell
JF - Applied Physics Letters
Y1 - 1989
A1 - John C. Zolper
A1 - Srinivasamohan Narayanan
A1 - Stuart R. Wenham
A1 - Martin A Green
VL - 55
UR - http://apl.aip.org/applab/v55/i22/p2363_s1
KW - Zolper1989
ER -
TY - ABST
T1 - Buried contact solar cell
Y1 - 1988
A1 - Stuart R. Wenham
A1 - Martin A Green
UR - http://www.freepatentsonline.com/4726850.html
N1 -
KW - Wenham1988
ER -
TY - JOUR
T1 - Light trapping properties of pyramidally textured surfaces
JF - Journal of Applied Physics
Y1 - 1987
A1 - Campbell, Patrick
A1 - Martin A Green
VL - 62
CP - 1
J1 - J. Appl. Phys.
KW - Campbell1987
ER -
TY - JOUR
T1 - Accuracy of Analytical Expressions for Solar Cell Fill Factors
JF - Solar Cells
Y1 - 1982
A1 - Martin A Green
VL - 7
N1 -
KW - Green1982
ER -
TY - JOUR
T1 - Solar Cells: Operating Principles, Technology and System Applications
Y1 - 1982
A1 - Martin A Green
AB -
PB - Prentice-Hall
SN - 0-85823-580-3
N1 - 1. Solar Cells and Sunlight
2. Review of Semiconductor Properties
3. Generation, Recombination and the Basic Equation of Device Physics
4. p-n Junction Diodes
5. Efficiency Limits, Losses and Measurement
6. Standard Silicon Solar Cell Technology
7. Improved Silicon Cell Technology
8. Design of Silicon Solar Cells
9. Other Device Structures
10. Other Semiconductor Materials
11.Concentrating Systems
12. Photovoltaic Systems: Components and Applications
13. Design of Stand-alone Systems
14. Residential and Centralised Photovoltaic Power Systems
Appendix A: Physical Constants
Appendix B: Selected Properties of Silicon
Appendix C: List of Symbols
KW - Green1982book
ER -
TY - JOUR
T1 - Solar cell fill factors: General graph and empirical expressions
JF - Solid-State Electronics
Y1 - 1981
A1 - Martin A Green
VL - 24
N1 -
KW - Green1981
ER -
TY - JOUR
T1 - The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell
JF - Review of Modern Physics
Y1 - 1933
A1 - Grondahl, L.O.
VL - 5
N1 -
KW - Grondahl1933
ER -