01419nas a2200133   4500008004100000022001300041245010500054210006900159260001600228300000900244490000800253520097300261856005101234       2008                        eng d  a0013465100aPolymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition0 aPolymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhomb  cJan-01-2008  aD5170 v1553 aPolycrystalline thin films (100–450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6×10−6 (Ωcm)−1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500°C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550°C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, ∼1 (Ωcm)−1 . Photovoltaic effect in different structures involving these films is presented.   uhttp://jes.ecsdl.org/cgi/doi/10.1149/1.291719801278nas a2200121   4500008004100000022002500041245014700066210006900213300001400282490000800296520080900304856004301113       1993                        eng d  a0013-4651, 1945-711100aStructure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties0 aStructure and Composition of Chemically Deposited Thin Films of   a754–7590 v1403 aChemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200°C} and remain stable up to {300°C.} But oxygen chemisorption reduces the photo‐ and dark conductivities of the films annealed at {300°C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220°C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {∼300°C.}  uhttp://jes.ecsdl.org/content/140/3/754