@article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @article {Green2010, title = {Solar cell efficiency tables (version 35)}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {18}, number = {2}, year = {2010}, note = {

Compendex

}, pages = {144{\textendash}150}, abstract = {

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

}, keywords = {Conversion efficiency, Energy conversion, solar cells, Solar energy, Solar power generation}, issn = {10627995}, url = {http://dx.doi.org/10.1002/pip.974}, author = {Martin A Green and Keith Emery and Yoshihiro Hishikawa and Wilhelm Warta} } @proceedings {Dimroth2009, title = {METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 \% EFFICIENCY}, year = {2009}, note = {
}, author = {F. Dimroth and W. Guter and J. Sch{\"o}ne and E. Welser and M. Steiner and E. Oliva and A. Wekkeli and G. Siefer and S.P. Philipps and A.W. Bett} } @article {Green2009, title = {The path to 25\% silicon solar cell efficiency: History of silicon cell evolution}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {17}, year = {2009}, note = {
}, pages = {183-189}, author = {Martin A Green} } @article {green_self-consistent_2008, title = {Self-consistent optical parameters of intrinsic silicon at 300~K including temperature coefficients}, journal = {Solar Energy Materials and Solar Cells}, volume = {92}, year = {2008}, pages = {1305{\textendash}1310}, abstract = {An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300\&\#xa0;K} are tabulated over the 0.25{\textendash}1.45\&\#xa0;μm wavelength range at 0.01\&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers{\textendash}Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {-24\&\#xa0;{\textdegree}C} to {200\&\#xa0;{\textdegree}C} range.}, keywords = {Absorption coefficient, optical properties, SILICON SOLAR CELLS}, issn = {0927-0248}, doi = {10.1016/j.solmat.2008.06.009}, url = {http://www.sciencedirect.com/science/article/pii/S0927024808002158}, author = {Martin A Green} } @article {Wenham2007, title = {Applied Photovoltaics}, year = {2007}, note = {

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

}, pages = {317}, publisher = {Earthscan}, address = {London, UK}, abstract = {
}, isbn = {1-84407-401-3}, url = {http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8\&s=books\&qid=1279558328\&sr=8-1}, author = {Wenham, S.R. and Martin A Green and Watt, M. E. and R. Corkish} } @article {Pysch2007, title = {A review and comparison of different methods to determine the series resistance of solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {91}, year = {2007}, note = {
}, month = {11/2007}, pages = {1698 - 1706}, issn = {09270248}, doi = {10.1016/j.solmat.2007.05.026}, author = {PYSCH, D and A. Mette and Stefan W. Glunz} } @article {Goetzberger2005, title = {Photovoltaic Solar Energy Generation}, year = {2005}, note = {

1. What is Photovoltaics?

2. Physics of Solar Cells

3. Silicon Solar Cell Material and Technology

4. Crystalline Thin-Film Silicon

5. Other Materials, New Concepts

6. Solar Cells and Solar Modules

7. PV Systems

8. PV Systems Installation Possibilities

9. Environmental Impacts by PV Systems

10. Efficinecy and Performance of PV Systems

11. PV Markets Support Measures and Costs

12. The Future PV

13. Other (Perhaps Competing) CO2-Free Energy Sources

14. Popular Killing Arguments Against PV

References

Index

}, pages = {232}, publisher = {Springer}, address = {Berlin, Germany}, isbn = {3-540-23676-7}, url = {http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books\&ie=UTF8\&qid=1279649098\&sr=1-2}, author = {Adolf Goetzberger and Volker Uwe Hoffmann} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Zhao2001, title = {24.5\% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates}, journal = {Solar Energy Materials and Solar Cells}, volume = {66}, year = {2001}, note = {
}, pages = {27 - 36}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00155-0}, author = {Zhao, J. and Aihua Wang and Martin A Green} } @article {Glunz2001, title = {Degradation of carrier lifetime in Cz silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, number = {1-4}, year = {2001}, note = {
}, pages = {219 - 229}, keywords = {Defects}, issn = {0927-0248}, doi = {DOI: 10.1016/S0927-0248(00)00098-2}, url = {http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f}, author = {Stefan W. Glunz and S. Rein and W. Warta and J. Knobloch and W. Wettling} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @proceedings {Zhao1998, title = {19.8\% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface}, year = {1998}, note = {
}, address = {Vienna, Austria}, author = {Zhao, J. and Wang, A. and Martin A Green} } @article {Zhao1991, title = {19.8\% efficient \"honeycomb\" textured multicrystalline and 24.4\% monocrystalline silicon solar cells}, journal = {Applied Physics Letters}, volume = {73}, number = {14}, year = {1998}, pages = {1991-1993}, publisher = {AIP}, keywords = {elemental semiconductors, SILICON, solar cells, surface texture}, doi = {10.1063/1.122345}, url = {http://link.aip.org/link/?APL/73/1991/1}, author = {Jianhua Zhao and Aihua Wang and Martin A Green and Francesca Ferrazza} } @article {Zhao1997, title = {20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {269{\textendash}276}, author = {Zhao, J. and Wang, A. and Yun, F. and Zhang, G. and Roche, D.M. and Wenham, S.R. and Martin A Green} } @article {Green1995, title = {Optical properties of intrinsic silicon at 300 K}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {3}, year = {1995}, note = {
}, month = {1995}, pages = {189 - 192}, issn = {1099159X}, doi = {10.1002/pip.4670030303}, author = {Martin A Green and Keevers, Mark J.} } @article {Robinson1994, title = {Departures from the principle of superposition in silicon solar cells}, journal = {Journal of Applied Physics}, volume = {76}, year = {1994}, note = {
}, month = {1994}, pages = {7920}, issn = {00218979}, doi = {10.1063/1.357902}, author = {Robinson, S. J. and Armin G Aberle and Martin A Green} } @book {Ghandi1994, title = {{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition}, year = {1994}, publisher = {Wiley-Interscience}, organization = {Wiley-Interscience}, edition = {2}, isbn = {0471580058}, author = {Ghandhi, Sorab K.} } @conference {Aberle1993, title = {A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells}, booktitle = {Proceedings of the 23rd IEEE Photovoltaic Specialists Conference}, year = {1993}, address = {Louisville, KY}, author = {Armin G Aberle and Wenham, S.R. and Martin A Green} } @book {Green1992, title = {Solar Cells - Operating Principles, Technology and System Application}, year = {1992}, note = {
}, publisher = {University of NSW}, organization = {University of NSW}, address = {Kensington, Australia}, author = {Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, number = {2}, year = {1991}, note = {
}, pages = {846-854}, publisher = {AIP}, keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE}, doi = {10.1063/1.349645}, url = {http://link.aip.org/link/?JAP/70/846/1}, author = {A. B. Sproul and Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, year = {1991}, note = {
}, month = {1991}, pages = {846}, issn = {00218979}, doi = {10.1063/1.349645}, author = {A. B. Sproul and Martin A Green} } @proceedings {Zhao1991, title = {Improvements in Silicon Solar Cell Performance}, year = {1991}, note = {
}, pages = {399-402}, author = {Zhao, J. and Wang A. and Dai, X. and Martin A Green and Wenham, S.R.} } @book {Blakers1991, title = {The Role of Photovoltaics in Reducing Greenhouse Gas Emissions}, year = {1991}, note = {
}, publisher = {Australian Government Publishing Service}, organization = {Australian Government Publishing Service}, address = {Canberra}, author = {Andrew W Blakers and Martin A Green and T. Leo and H. Outhred and B. Robins} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Sproul1990, title = {Improved value for the silicon intrinsic carrier concentration at 300 K}, journal = {Applied Physics Letters}, volume = {57}, year = {1990}, note = {
}, month = {1990}, pages = {255}, issn = {00036951}, doi = {10.1063/1.103707}, author = {A. B. Sproul and Martin A Green and Zhao, J.} } @proceedings {Green1990, title = {Photovoltaics: Coming of Age}, year = {1990}, note = {
}, month = {05/1990}, pages = {1-8}, address = {Orlando, USA}, abstract = {The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40\% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.}, doi = {10.1109/PVSC.1990.111582}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582}, author = {Martin A Green} } @article {Zolper1989, title = {16.7\% efficient, laser textured, buried contact polycrystalline silicon solar cell}, journal = {Applied Physics Letters}, volume = {55}, number = {22}, year = {1989}, pages = {2363}, issn = {00036951}, doi = {10.1063/1.102019}, url = {http://apl.aip.org/applab/v55/i22/p2363_s1}, author = {John C. Zolper and Srinivasamohan Narayanan and Stuart R. Wenham and Martin A Green} } @booklet {Wenham1988, title = {Buried contact solar cell}, number = {4726850}, year = {1988}, note = {
}, month = {February}, url = {http://www.freepatentsonline.com/4726850.html}, author = {Stuart R. Wenham and Martin A Green} } @article {Campbell1987, title = {Light trapping properties of pyramidally textured surfaces}, journal = {Journal of Applied Physics}, volume = {62}, year = {1987}, month = {Jan-01-1987}, pages = {243}, issn = {00218979}, doi = {10.1063/1.339189}, author = {Campbell, Patrick and Martin A Green} } @article {Green1982, title = {Accuracy of Analytical Expressions for Solar Cell Fill Factors}, journal = {Solar Cells}, volume = {7}, year = {1982}, note = {
}, pages = {337-340}, author = {Martin A Green} } @article {Green1982book, title = {Solar Cells: Operating Principles, Technology and System Applications}, year = {1982}, note = {

1. Solar Cells and Sunlight

2. Review of Semiconductor Properties

3. Generation, Recombination and the Basic Equation of Device Physics

4. p-n Junction Diodes

5. Efficiency Limits, Losses and Measurement

6. Standard Silicon Solar Cell Technology

7. Improved Silicon Cell Technology

8. Design of Silicon Solar Cells

9. Other Device Structures

10. Other Semiconductor Materials

11.Concentrating Systems

12. Photovoltaic Systems: Components and Applications

13. Design of Stand-alone Systems

14. Residential and Centralised Photovoltaic Power Systems

Appendix A: Physical Constants

Appendix B: Selected Properties of Silicon

Appendix C: List of Symbols

}, pages = {274}, publisher = {Prentice-Hall}, abstract = {
}, isbn = {0-85823-580-3}, author = {Martin A Green} } @article {Green1981, title = {Solar cell fill factors: General graph and empirical expressions}, journal = {Solid-State Electronics}, volume = {24}, year = {1981}, note = {
}, pages = {788 - 789}, issn = {00381101}, doi = {10.1016/0038-1101(81)90062-9}, author = {Martin A Green} } @article {Grondahl1933, title = {The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell}, journal = {Review of Modern Physics}, volume = {5}, year = {1933}, note = {
}, pages = {141}, author = {Grondahl, L.O.} }