@article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @conference {Cousins2010, title = {Gen III: Improved Performance at Lower Cost}, booktitle = {35th IEEE Photovoltaic Specialists Conference}, year = {2010}, note = {
}, publisher = {IEEE}, organization = {IEEE}, address = {Honolulu, Hawaii}, author = {Peter J. Cousins and David D. Smith and Hsin-Chiao Luan and Jane Manning and Tim D. Dennis and Ann Waldhaue and Karen E. Wilson and Gabriel Harley and William P. Mulligan} } @article {Wenham2007, title = {Applied Photovoltaics}, year = {2007}, note = {

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

}, pages = {317}, publisher = {Earthscan}, address = {London, UK}, abstract = {
}, isbn = {1-84407-401-3}, url = {http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8\&s=books\&qid=1279558328\&sr=8-1}, author = {Wenham, S.R. and Martin A Green and Watt, M. E. and R. Corkish} } @proceedings {DeCeuster2007, title = {Low Cost, High Volume Production of >22\% Efficiency Silicon Solar Cells}, year = {2007}, note = {
}, author = {De Ceuster, D. and P. Cousins and D. Rose and M. Cudzinovic and W. Mulligan} } @conference {bunea_low_2006, title = {Low Light Performance of Mono-Crystalline Silicon Solar Cells}, booktitle = {4th World Conference on Photovoltaic Energy Conference}, year = {2006}, month = {2006}, pages = {1312{\textendash}1314}, address = {Waikoloa, HI}, doi = {10.1109/WCPEC.2006.279655}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885\&tag=1}, author = {Gabriela Bunea and Karen Wilson and Yevgeny Meydbray and Matthew Campbell and Denis De Ceuster} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {Kerr2002, title = {General parameterization of Auger recombination in crystalline silicon}, journal = {Journal of Applied Physics}, volume = {91}, number = {4}, year = {2002}, pages = {2473-2480}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON}, doi = {10.1063/1.1432476}, url = {http://link.aip.org/link/?JAP/91/2473/1}, author = {Mark J Kerr and Andr{\'e}s Cuevas} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @proceedings {Honsberg2001, title = {A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits}, year = {2001}, note = {
}, pages = {22-26}, author = {Christiana B Honsberg and R. Corkish and S. P. Bremner} } @article {Macdonald2001, title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon}, journal = {Journal of Applied Physics}, volume = {89}, number = {5}, year = {2001}, pages = {2772-2778}, publisher = {AIP}, keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells}, doi = {10.1063/1.1346652}, url = {http://link.aip.org/link/?JAP/89/2772/1}, author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas} } @conference {Sinton2000, title = {A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization}, booktitle = {16th European Photovoltaic Solar Energy Conference}, year = {2000}, month = {05/2000}, pages = {1152{\textendash}1155}, address = {Glasgow, Scotland}, author = {Sinton, R.A. and Andr{\'e}s Cuevas} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @article {Chandramohan1997, title = {Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications}, journal = {physica status solidi (a)}, volume = {163}, year = {1997}, month = {Jan-10-1997}, pages = {R11 - R12}, issn = {00318965}, doi = {10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3}, author = {Chandramohan, R. and Sanjeeviraja, C. and Mahalingam, T.} } @article {Sinton1996, title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data}, journal = {Applied Physics Letters}, volume = {69}, number = {17}, year = {1996}, pages = {2510-2512}, publisher = {AIP}, keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS}, doi = {10.1063/1.117723}, url = {http://link.aip.org/link/?APL/69/2510/1}, author = {Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Stocks1996, title = {Texturing of polycrystalline silicon}, journal = {Solar Energy Materials and Solar Cells}, volume = {40}, number = {1}, year = {1996}, pages = {33 - 42}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(95)00077-1}, url = {http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541}, author = {M. J. Stocks and A. J. Carr and Andrew W Blakers} } @article {Verlinden1994, title = {7000 High Efficiency Cells for a Dream}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {143 - 152}, author = {Verlinden, P.J. and Richard M Swanson and Crane, R.A.} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Luke1987, title = {Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity}, journal = {Journal of Applied Physics}, volume = {61}, number = {6}, year = {1987}, pages = {2282-2293}, publisher = {AIP}, keywords = {carrier lifetime, LASERRADIATION HEATING, MINORITY CARRIERS, RECOMBINATION, SILICON, SILICON SOLAR CELLS, SURFACE PROPERTIES, THEORETICAL DATA, VELOCITY, WAFERS}, doi = {10.1063/1.337938}, url = {http://link.aip.org/link/?JAP/61/2282/1}, author = {Keung L. Luke and Li-Jen Cheng} } @article {Campbell1987, title = {Light trapping properties of pyramidally textured surfaces}, journal = {Journal of Applied Physics}, volume = {62}, year = {1987}, month = {Jan-01-1987}, pages = {243}, issn = {00218979}, doi = {10.1063/1.339189}, author = {Campbell, Patrick and Martin A Green} } @article {Tiedje1984, title = {Limiting Efficiency of Silicon Solar Cells}, journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES}, volume = {ED-31}, year = {1984}, note = {
}, month = {05/1984}, author = {T. Tiedje and E Yablonovich and G.D. Cody and B.G. Brooks} } @article {Yablonovich1982, title = {Intensity Enhancement in Textured Optical Sheets for Solar Cells}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-29}, year = {1982}, note = {
}, pages = {300-305}, author = {E Yablonovich and G.D. Cody} } @booklet {Bailey1979, title = {United States Patent: 4137123 - Texture etching of silicon: method}, year = {1979}, abstract = {

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

}, url = {http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2\&Sect2=HITOFF\&p=1\&u=\%2Fnetahtml\%2FPTO\%2Fsearch-bool.html\&r=32\&f=G\&l=50\&co1=AND\&d=PTXT\&s1=4,137,123\&OS=4,137,123\&RS=4,137,123}, author = {William L. Bailey and Michael G. Coleman and Cynthia B. Harris and Israel A. Lesk} } @article {Card1977, title = {Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-24}, year = {1977}, note = {
}, pages = {397-402}, author = {Card, H.C. and Yang, E.S.} } @article {Cooper1969, title = {The absorption of radiation in solar stills}, journal = {Solar Energy}, volume = {12}, number = {3}, year = {1969}, note = {
}, pages = {333 - 346}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(69)90047-4}, url = {http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5}, author = {P.I. Cooper} } @article {Pliskin1964, title = {Nondestructive determination of thickness and refractive index of transparent films}, journal = {IBM Journal of Research Devices}, volume = {8}, number = {1}, year = {1964}, note = {
}, pages = {43{\textendash}51}, abstract = {

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[\ΔN\λ]/[2\µ(cos} r2, - cos r1)], where \λ is the wavelength of the filtered light, \µ is the refractive index, and {\ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

}, url = {http://portal.acm.org/citation.cfm?id=1662391}, author = {W. A. Pliskin and E. E. Conrad} } @article {Chapin1954, title = {A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power}, journal = {Journal of Applied Physics}, volume = {25}, year = {1954}, note = {
}, pages = {676-677}, author = {Chapin, D.M. and Fuller, C.S. and Pearson, G.L.} } @article {Czochralski1918, title = {Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle}, journal = {Zeitschrift f{\"u}r physikalische Chemie}, volume = {92}, year = {1918}, pages = {219{\textendash}221}, author = {Czochralski, J.} }