@proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Mette2007, title = {Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {15}, year = {2007}, note = {
}, pages = {493-505}, author = {A. Mette and et al} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Reda2003, title = {Solar Position Algorithm for Solar Radiation Applications}, number = {TP-560-34302, R}, year = {2003}, note = {
}, month = {2003}, author = {Reda, I and Andreas, A} } @article {BlancoMuriel2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, number = {5}, year = {2001}, note = {
}, pages = {431 - 441}, keywords = {Solar tracking}, issn = {0038-092X}, doi = {DOI: 10.1016/S0038-092X(00)00156-0}, url = {http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993}, author = {Manuel Blanco-Muriel and Diego C. Alarc{\'o}n-Padilla and Teodoro L{\'o}pez-Moratalla and Mart{\'I}n Lara-Coira} } @article {Altermatt2001, title = {Improvements in numerical modelling of highly injected crystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, pages = {149-155(7)}, abstract = {

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

}, url = {http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1}, author = {Pietro P Altermatt and Sinton, R.A. and G. Heiser} } @mastersthesis {Anwar2000, title = {Aluminium Back Surface Field in Buried Contact Solar Cells}, volume = {Bachelor of Engineering}, year = {2000}, note = {
}, school = {University of New South Wales}, type = {masters}, author = {Anwar, K.K.} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @proceedings {vanderHeide2000, title = {Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques}, year = {2000}, note = {
}, pages = {1438}, address = {Glasgow (United Kingdom)}, author = {A.S.H. van der Heide and et al} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @article {Nagel1999, title = {Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors}, journal = {Journal of Applied Physics}, volume = {86}, number = {11}, year = {1999}, pages = {6218-6221}, publisher = {AIP}, keywords = {carrier lifetime, photoconductivity}, doi = {10.1063/1.371633}, url = {http://link.aip.org/link/?JAP/86/6218/1}, author = {Henning Nagel and Christopher Berge and Armin G Aberle} } @article {Robinson1994, title = {Departures from the principle of superposition in silicon solar cells}, journal = {Journal of Applied Physics}, volume = {76}, year = {1994}, note = {
}, month = {1994}, pages = {7920}, issn = {00218979}, doi = {10.1063/1.357902}, author = {Robinson, S. J. and Armin G Aberle and Martin A Green} } @conference {Aberle1993, title = {A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells}, booktitle = {Proceedings of the 23rd IEEE Photovoltaic Specialists Conference}, year = {1993}, address = {Louisville, KY}, author = {Armin G Aberle and Wenham, S.R. and Martin A Green} } @proceedings {Zhao1991, title = {Improvements in Silicon Solar Cell Performance}, year = {1991}, note = {
}, pages = {399-402}, author = {Zhao, J. and Wang A. and Dai, X. and Martin A Green and Wenham, S.R.} } @article {531, title = {High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing}, journal = {Journal of Applied Physics}, volume = {42}, year = {1971}, month = {Jan-01-1971}, pages = {1204}, abstract = {Electron mobility in ZnSe has been measured between 40{\textdegree} and 400{\textdegree}K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2/V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.}, issn = {00218979}, doi = {10.1063/1.1660167}, author = {Aven, M.} } @article {Auger1923, title = {Sur les rayons \β secondaires produits dans un gaz par des rayons X}, journal = {C.R.A.S.}, volume = {177}, year = {1923}, note = {
}, pages = {169-171}, author = {P. Auger} } @article {Adams1877, title = {The Action of Light on Selenium}, journal = {Proceedings of the Royal Society, London}, volume = {A25}, year = {1877}, note = {
}, pages = {113}, author = {Adams, W.G. and Day, R.E.} }