Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

Submitted by stuart on Tue, 03/12/2019 - 10:17

J. Brody 와/과 Rohatgi, A., “Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon”, Solid-State Electronics, vol 45, 호 9, pp 1549 - 1557, 2001.

• Log in or register to post comments
• DOI
• BibTeX
• RTF
• Tagged
• MARC
• EndNote XML
• RIS