Biblio

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Conference Proceedings
T. Takamoto 기타, “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
T. Takamoto 기타, “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
Journal Article
K. Misiakos 와/과 Tsamakis, D., “Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K”, Journal of Applied Physics, vol 74, 호 5, p 3293, 1993.
S. C. Baker-Finch, McIntosh, K. R., 와/과 Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol 2, 호 4, pp 457 - 464, 2012.
T. Tiedje, Yablonovich, E., Cody, G. D., 와/과 Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol ED-31, 1984.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., 와/과 Uraoka, Y., “Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence”, Applied Physics Letters, vol 86, p 262108, 2005.
W. R. Thurber, Mattis, R. L., Liu, Y. M., 와/과 Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol 127, pp 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., 와/과 Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol 127, pp 1807-1812, 1980.
F. C. Nix 와/과 Treptwo, A. W., “A Thallous Sulphide Photo EMF Cell”, Journal Opt. Society of America, vol 29, p 457, 1939.
Miscellaneous
W. R. Thurber, Mattis,, Liu,, 와/과 Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.