Biblio

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J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., 와/과 Van-Overstraeten, R., Low-cost industrial technologies of crystalline silicon solar cells, Proceedings-of-the-IEEE, vol 85. pp 711-730, 1997.
R. M. Swanson, Approaching the 29% limit efficiency of silicon solar cells, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp 889-94, 2005.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
M. J. Stocks, Carr, A. J., 와/과 Blakers, A. W., Texturing of polycrystalline silicon, Solar Energy Materials and Solar Cells, vol 40, pp 33 - 42, 1996.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, p 846, 1991.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol 57, p 255, 1990.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, pp 846-854, 1991.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol 76, pp 2851-2854, 1994.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol 34, pp 711-718, 1958.
R. A. Sinton 와/과 Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp 1152–1155.
R. A. Sinton 와/과 Swanson, R. M., Recombination in highly injected silicon, Electron Devices, IEEE Transactions on, vol 34, pp 1380 - 1389, 1987.
R. A. Sinton 와/과 Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol 69, pp 2510-2512, 1996.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
W. Shockley 와/과 Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol 32, pp 510-519, 1961.
W. Shockley 와/과 Read, W. T., Statistics of the Recombinations of Holes and Electrons, Physical Review, vol 87, p 835, 1952.
J. N. Shive, Semiconductor Devices, Chapter 8, New Jersey: Van Nostrand, 1959.
H. B. Serreze, Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp 1-8, 1978.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
R. Sekuler 와/과 Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
D. Schroder, Semiconductor material and device characterization, 3rd editionrd ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
J. Schmidt, Kerr, M. J., 와/과 Altermatt, P. P., Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities, Journal of Applied Physics, vol 88, pp 1494-1497, 2000.