Biblio

Export 162 results:
Author [ Title(Asc)] Type Year
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N
W. Keogh 와/과 Blakers, A. W., “Natural Sunlight Calibration of Silicon Solar Cells.”, 17th European Photovoltaic Solar Energy Conference. Munich, Germany, 2001.
M
G. Masetti, Severi, M., 와/과 Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol ED-30, pp 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol 44, pp 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol 44, pp 271–289, 1990.
C. H. Wang, Misiakos, K., 와/과 Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol 37, pp 1314 - 1322, 1990.
F. Dimroth 기타, “METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY”, 34th IEEE Photovoltaic Specialists Conference. 2009.
A. E. Becquerel, “Memoire sur les effects d´electriques produits sous l´influence des rayons solaires”, Annalen der Physick und Chemie, vol 54, pp 35-42, 1841.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol 13, pp 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol 34, pp 711-718, 1958.
A. S. H. van der Heide 와/과 et al, “Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques”, 16th European Photovoltaic Solar Energy Conference. Glasgow (United Kingdom), p 1438, 2000.
L
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., 와/과 Van-Overstraeten, R., “Low-cost industrial technologies of crystalline silicon solar cells”, Proceedings-of-the-IEEE, vol 85. pp 711-730, 1997.
G. Bunea, Wilson, K., Meydbray, Y., Campbell, M., 와/과 Ceuster, D. D., “Low Light Performance of Mono-Crystalline Silicon Solar Cells”, in 4th World Conference on Photovoltaic Energy Conference, Waikoloa, HI, 2006, pp 1312–1314.
D. De Ceuster, Cousins, P., Rose, D., Cudzinovic, M., 와/과 Mulligan, W., “Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells”, 22nd European Photovoltaic Specialist Conference. 2007.
T. Tiedje, Yablonovich, E., Cody, G. D., 와/과 Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol ED-31, 1984.
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol 2, p 402, 602, 1941.
P. Campbell 와/과 Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol 62, 호 1, p 243, 1987.
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R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., 와/과 Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp 167-170, 1451, 1997.
S. C. Baker-Finch, McIntosh, K. R., 와/과 Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol 2, 호 4, pp 457 - 464, 2012.
E. Yablonovich 와/과 Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol ED-29, pp 300-305, 1982.
K. R. McIntosh 와/과 Honsberg, C. B., “The Influence of Edge Recombination on a Solar Cell’s IV Curve”, 16th European Photovoltaic Solar Energy Conference. 2000.
J. Zhao, A., W., Dai, X., Green, M. A., 와/과 Wenham, S. R., “Improvements in Silicon Solar Cell Performance”, 22nd IEEE PV Specialists Conference. pp 399-402, 1991.
P. P. Altermatt, Sinton, R. A., 와/과 Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol 65, pp 149-155(7), 2001.
A. B. Sproul 와/과 Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, pp 846-854, 1991.
A. B. Sproul 와/과 Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, p 846, 1991.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol 57, p 255, 1990.

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