Biblio

Export 162 results:
Author Title [ Type(Asc)] Year
Journal Article
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271 - 289, 1990.
C. H. Wang, Misiakos, K., 와/과 Neugroschel, A., Minority-carrier transport parameters in n-type silicon, IEEE Transactions on Electron Devices, vol 37, pp 1314 - 1322, 1990.
A. E. Becquerel, Memoire sur les effects d´electriques produits sous l´influence des rayons solaires, Annalen der Physick und Chemie, vol 54, pp 35-42, 1841.
E. G. Laue, The measurement of solar spectral irradiance at different terrestrial elevations, Solar Energy, vol 13, pp 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol 34, pp 711-718, 1958.
T. Tiedje, Yablonovich, E., Cody, G. D., 와/과 Brooks, B. G., Limiting Efficiency of Silicon Solar Cells, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol ED-31, 1984.
R. S. Ohl, Light-Sensitive Electric Device, U.S. Patent, vol 2, p 402, 602, 1941.
P. Campbell 와/과 Green, M. A., Light trapping properties of pyramidally textured surfaces, Journal of Applied Physics, vol 62, 호 1, p 243, 1987.
S. C. Baker-Finch, McIntosh, K. R., 와/과 Terry, M. L., Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics, IEEE Journal of Photovoltaics, vol 2, 호 4, pp 457 - 464, 2012.
E. Yablonovich 와/과 Cody, G. D., Intensity Enhancement in Textured Optical Sheets for Solar Cells, IEEE Transactions on Electron Devices, vol ED-29, pp 300-305, 1982.
P. P. Altermatt, Sinton, R. A., 와/과 Heiser, G., Improvements in numerical modelling of highly injected crystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol 65, pp 149-155(7), 2001.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, p 846, 1991.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, pp 846-854, 1991.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol 57, p 255, 1990.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., 와/과 Cuevas, A., Improved quantitative description of Auger recombination in crystalline silicon, Physical Review B, vol 86, 호 16, 2012.
P. Campbell 와/과 Green, M. A., High performance light trapping textures for monocrystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol 65, 호 1-4, pp 369 - 375, 2001.
M. Aven, High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing, Journal of Applied Physics, vol 42, 호 3, p 1204, 1971.
A. Luque 와/과 Hegedus, S., Handbook of Photovoltaic Science and Engineering, p 1117, 2003.
J. Hansen, Global temperature change, Proceedings of the National Academy of Sciences, vol 103, pp 14288 - 14293, 2006.
NASA, GISS Surface Temperature Analysis, 2010.
A. Einstein, Generation and transformation of light, Annalen der Physik, vol 17, 1905.
M. J. Kerr, Cuevas, A., 와/과 Sinton, R. A., Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements, Journal of Applied Physics, vol 91, p 399, 2002.
H. Nagel, Berge, C., 와/과 Aberle, A. G., Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors, Journal of Applied Physics, vol 86, pp 6218-6221, 1999.
M. J. Kerr 와/과 Cuevas, A., General parameterization of Auger recombination in crystalline silicon, Journal of Applied Physics, vol 91, pp 2473-2480, 2002.
K. Bothe, Sinton, R., 와/과 Schmidt, J., Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon, Progress in Photovoltaics: Research and Applications, vol 13, pp 287 - 296, 2005.

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