Biblio

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Journal Article
R. A. Sinton 와/과 Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol 69, pp 2510-2512, 1996.
J. Schmidt, Kerr, M. J., 와/과 Altermatt, P. P., Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities, Journal of Applied Physics, vol 88, pp 1494-1497, 2000.
W. Shockley 와/과 Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol 32, pp 510-519, 1961.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol 76, pp 2851-2854, 1994.
J. Henrie, Kellis, S., Schultz, S., 와/과 Hawkins, A., Electronic color charts for dielectric films on silicon, Optics Express, vol 12, pp 1464–1469, 2004.
J. R. G. Ross 와/과 Smokler, M. I., Flat-Plate Solar Array Project Final Report, pp 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., 와/과 Sreenivasan, K. R., From the Cover: Anomalously weak solar convection, Proceedings of the National Academy of Sciences, vol 109, 호 30, pp 11928 - 11932, 2012.
K. Bothe, Sinton, R., 와/과 Schmidt, J., Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon, Progress in Photovoltaics: Research and Applications, vol 13, pp 287 - 296, 2005.
K. Bothe, Sinton, R., 와/과 Schmidt, J., Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon, Progress in Photovoltaics: Research and Applications, vol 13, pp 287 - 296, 2005.
M. J. Kerr, Cuevas, A., 와/과 Sinton, R. A., Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements, Journal of Applied Physics, vol 91, p 399, 2002.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., 와/과 Cuevas, A., Improved quantitative description of Auger recombination in crystalline silicon, Physical Review B, vol 86, 호 16, 2012.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol 57, p 255, 1990.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, pp 846-854, 1991.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, p 846, 1991.
P. P. Altermatt, Sinton, R. A., 와/과 Heiser, G., Improvements in numerical modelling of highly injected crystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol 65, pp 149-155(7), 2001.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol 34, pp 711-718, 1958.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271 - 289, 1990.
G. Masetti, Severi, M., 와/과 Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol ED-30, pp 764–9, 1983.
G. Masetti, Severi, M., 와/과 Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol ED-30, pp 764–9, 1983.
S. M. Hu, Fahey, P., 와/과 Sutton, P., On Phosphorus Diffusion in Silicon, On Phosphorus Diffusion in Silicon, vol 54, pp 6912-6922, 1983.
R. Chandramohan, Sanjeeviraja, C., 와/과 Mahalingam, T., Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications, physica status solidi (a), vol 163, 호 2, pp R11 - R12, 1997.
P. P. Altermatt, Schenk, A., Geelhaar, F., 와/과 Heiser, G., Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing, Journal of Applied Physics, vol 93, 호 3, p 1598, 2003.

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